Overview
The STB20NM50-1 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the Multiple Drain process with STMicroelectronics' PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The device is available in the I²PAK package and is designed for high-efficiency switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (continuous) at TC = 25°C | 20 | A |
| Drain Current (continuous) at TC = 100°C | 12.6 | A |
| Static Drain-Source On-Resistance (RDS(on)) | < 0.25 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Single Pulse Avalanche Energy (EAS) | 650 | mJ |
| Package | I²PAK | |
| Packaging | Tube |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- MDmesh™ technology for low on-resistance and high dynamic performances
- ECOPACK® packages with Lead-free second level interconnect
Applications
The STB20NM50-1 is primarily designed for high-efficiency switching applications, including but not limited to:
- Flyback converters
- LED lighting systems
- Other high-power switching circuits where low on-resistance and high avalanche capability are crucial
Q & A
- What is the maximum drain-source voltage (VDS) of the STB20NM50-1?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 20 A at 25°C and 12.6 A at 100°C.
- What is the typical on-resistance (RDS(on)) of the STB20NM50-1?
The typical on-resistance (RDS(on)) is less than 0.25 Ω.
- What is the gate threshold voltage range?
The gate threshold voltage range is between 3 V and 5 V.
- Is the STB20NM50-1 100% avalanche tested?
- What package and packaging options are available for the STB20NM50-1?
The STB20NM50-1 is available in the I²PAK package and is packaged in tubes.
- What are the key features of the MDmesh™ technology used in the STB20NM50-1?
The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance.
- What are some common applications for the STB20NM50-1?
- Does the STB20NM50-1 come in an environmentally friendly package?
- What is the single pulse avalanche energy (EAS) of the STB20NM50-1?
The single pulse avalanche energy (EAS) is 650 mJ.
