Overview
The STP20NM60A is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of power switching applications. The STP20NM60A features a low on-resistance of 0.29Ω, high drain-source voltage of 600V, and a continuous drain current of 20A. The device is available in various packages including TO-220, TO-220FP, D²PAK, and I²PAK, catering to different design requirements.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 600 | V |
Gate-Source Voltage (VGS) | ±30 | V |
Continuous Drain Current (ID) at TC = 25°C | 20 | A |
Continuous Drain Current (ID) at TC = 100°C | 12.6 | A |
Pulsed Drain Current (IDM) | 80 | A |
On-Resistance (RDS(on)) | < 0.29 | Ω |
Avalanche Current (IAS) | 10 | A |
Single Pulse Avalanche Energy (EAS) | 650 | mJ |
Gate Input Resistance (Rg) | 1.6 | Ω |
Total Gate Charge (Qg) | 54 | nC |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Advanced MDmesh™ technology for improved dynamic performance
- Available in TO-220, TO-220FP, D²PAK, and I²PAK packages
- ECOPACK® packages with Lead-free second level interconnect
Applications
The STP20NM60A is designed for various power switching applications, including:
- Power supplies and DC-DC converters
- Motor control and drives
- High-frequency switching circuits
- Uninterruptible Power Supplies (UPS)
- Industrial and automotive power systems
Q & A
- What is the maximum drain-source voltage of the STP20NM60A?
The maximum drain-source voltage (VDS) is 600V.
- What is the continuous drain current at 25°C for the STP20NM60A?
The continuous drain current (ID) at 25°C is 20A.
- What is the on-resistance (RDS(on)) of the STP20NM60A?
The on-resistance (RDS(on)) is less than 0.29Ω.
- What are the key features of the MDmesh™ technology used in the STP20NM60A?
The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance.
- In which packages is the STP20NM60A available?
The STP20NM60A is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.
- What is the maximum pulse drain current (IDM) for the STP20NM60A?
The maximum pulse drain current (IDM) is 80A.
- What is the single pulse avalanche energy (EAS) for the STP20NM60A?
The single pulse avalanche energy (EAS) is 650 mJ.
- What is the gate input resistance (Rg) of the STP20NM60A?
The gate input resistance (Rg) is 1.6 Ω.
- What are some typical applications of the STP20NM60A?
Typical applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, UPS, and industrial and automotive power systems.
- Does the STP20NM60A come in environmentally friendly packaging?