STP20NM60A
  • Share:

STMicroelectronics STP20NM60A

Manufacturer No:
STP20NM60A
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 20A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP20NM60A is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of power switching applications. The STP20NM60A features a low on-resistance of 0.29Ω, high drain-source voltage of 600V, and a continuous drain current of 20A. The device is available in various packages including TO-220, TO-220FP, D²PAK, and I²PAK, catering to different design requirements.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 20 A
Continuous Drain Current (ID) at TC = 100°C 12.6 A
Pulsed Drain Current (IDM) 80 A
On-Resistance (RDS(on)) < 0.29 Ω
Avalanche Current (IAS) 10 A
Single Pulse Avalanche Energy (EAS) 650 mJ
Gate Input Resistance (Rg) 1.6 Ω
Total Gate Charge (Qg) 54 nC

Key Features

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Advanced MDmesh™ technology for improved dynamic performance
  • Available in TO-220, TO-220FP, D²PAK, and I²PAK packages
  • ECOPACK® packages with Lead-free second level interconnect

Applications

The STP20NM60A is designed for various power switching applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits
  • Uninterruptible Power Supplies (UPS)
  • Industrial and automotive power systems

Q & A

  1. What is the maximum drain-source voltage of the STP20NM60A?

    The maximum drain-source voltage (VDS) is 600V.

  2. What is the continuous drain current at 25°C for the STP20NM60A?

    The continuous drain current (ID) at 25°C is 20A.

  3. What is the on-resistance (RDS(on)) of the STP20NM60A?

    The on-resistance (RDS(on)) is less than 0.29Ω.

  4. What are the key features of the MDmesh™ technology used in the STP20NM60A?

    The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance.

  5. In which packages is the STP20NM60A available?

    The STP20NM60A is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.

  6. What is the maximum pulse drain current (IDM) for the STP20NM60A?

    The maximum pulse drain current (IDM) is 80A.

  7. What is the single pulse avalanche energy (EAS) for the STP20NM60A?

    The single pulse avalanche energy (EAS) is 650 mJ.

  8. What is the gate input resistance (Rg) of the STP20NM60A?

    The gate input resistance (Rg) is 1.6 Ω.

  9. What are some typical applications of the STP20NM60A?

    Typical applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, UPS, and industrial and automotive power systems.

  10. Does the STP20NM60A come in environmentally friendly packaging?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):192W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
463

Please send RFQ , we will respond immediately.

Similar Products

Part Number STP20NM60A STP20NM60
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V 1500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 192W (Tc) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK