STP20NM60A
  • Share:

STMicroelectronics STP20NM60A

Manufacturer No:
STP20NM60A
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 20A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP20NM60A is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of power switching applications. The STP20NM60A features a low on-resistance of 0.29Ω, high drain-source voltage of 600V, and a continuous drain current of 20A. The device is available in various packages including TO-220, TO-220FP, D²PAK, and I²PAK, catering to different design requirements.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 20 A
Continuous Drain Current (ID) at TC = 100°C 12.6 A
Pulsed Drain Current (IDM) 80 A
On-Resistance (RDS(on)) < 0.29 Ω
Avalanche Current (IAS) 10 A
Single Pulse Avalanche Energy (EAS) 650 mJ
Gate Input Resistance (Rg) 1.6 Ω
Total Gate Charge (Qg) 54 nC

Key Features

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Advanced MDmesh™ technology for improved dynamic performance
  • Available in TO-220, TO-220FP, D²PAK, and I²PAK packages
  • ECOPACK® packages with Lead-free second level interconnect

Applications

The STP20NM60A is designed for various power switching applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits
  • Uninterruptible Power Supplies (UPS)
  • Industrial and automotive power systems

Q & A

  1. What is the maximum drain-source voltage of the STP20NM60A?

    The maximum drain-source voltage (VDS) is 600V.

  2. What is the continuous drain current at 25°C for the STP20NM60A?

    The continuous drain current (ID) at 25°C is 20A.

  3. What is the on-resistance (RDS(on)) of the STP20NM60A?

    The on-resistance (RDS(on)) is less than 0.29Ω.

  4. What are the key features of the MDmesh™ technology used in the STP20NM60A?

    The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance.

  5. In which packages is the STP20NM60A available?

    The STP20NM60A is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.

  6. What is the maximum pulse drain current (IDM) for the STP20NM60A?

    The maximum pulse drain current (IDM) is 80A.

  7. What is the single pulse avalanche energy (EAS) for the STP20NM60A?

    The single pulse avalanche energy (EAS) is 650 mJ.

  8. What is the gate input resistance (Rg) of the STP20NM60A?

    The gate input resistance (Rg) is 1.6 Ω.

  9. What are some typical applications of the STP20NM60A?

    Typical applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, UPS, and industrial and automotive power systems.

  10. Does the STP20NM60A come in environmentally friendly packaging?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):192W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
463

Please send RFQ , we will respond immediately.

Similar Products

Part Number STP20NM60A STP20NM60
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V 1500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 192W (Tc) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON