STP20NM60A
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STMicroelectronics STP20NM60A

Manufacturer No:
STP20NM60A
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 20A TO220AB
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Product Introduction

Overview

The STP20NM60A is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of power switching applications. The STP20NM60A features a low on-resistance of 0.29Ω, high drain-source voltage of 600V, and a continuous drain current of 20A. The device is available in various packages including TO-220, TO-220FP, D²PAK, and I²PAK, catering to different design requirements.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 20 A
Continuous Drain Current (ID) at TC = 100°C 12.6 A
Pulsed Drain Current (IDM) 80 A
On-Resistance (RDS(on)) < 0.29 Ω
Avalanche Current (IAS) 10 A
Single Pulse Avalanche Energy (EAS) 650 mJ
Gate Input Resistance (Rg) 1.6 Ω
Total Gate Charge (Qg) 54 nC

Key Features

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Advanced MDmesh™ technology for improved dynamic performance
  • Available in TO-220, TO-220FP, D²PAK, and I²PAK packages
  • ECOPACK® packages with Lead-free second level interconnect

Applications

The STP20NM60A is designed for various power switching applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits
  • Uninterruptible Power Supplies (UPS)
  • Industrial and automotive power systems

Q & A

  1. What is the maximum drain-source voltage of the STP20NM60A?

    The maximum drain-source voltage (VDS) is 600V.

  2. What is the continuous drain current at 25°C for the STP20NM60A?

    The continuous drain current (ID) at 25°C is 20A.

  3. What is the on-resistance (RDS(on)) of the STP20NM60A?

    The on-resistance (RDS(on)) is less than 0.29Ω.

  4. What are the key features of the MDmesh™ technology used in the STP20NM60A?

    The MDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and low gate input resistance.

  5. In which packages is the STP20NM60A available?

    The STP20NM60A is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.

  6. What is the maximum pulse drain current (IDM) for the STP20NM60A?

    The maximum pulse drain current (IDM) is 80A.

  7. What is the single pulse avalanche energy (EAS) for the STP20NM60A?

    The single pulse avalanche energy (EAS) is 650 mJ.

  8. What is the gate input resistance (Rg) of the STP20NM60A?

    The gate input resistance (Rg) is 1.6 Ω.

  9. What are some typical applications of the STP20NM60A?

    Typical applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, UPS, and industrial and automotive power systems.

  10. Does the STP20NM60A come in environmentally friendly packaging?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):192W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP20NM60A STP20NM60
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V 1500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 192W (Tc) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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