2N7002KX-7
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Diodes Incorporated 2N7002KX-7

Manufacturer No:
2N7002KX-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KX-7 is a small signal, N-channel enhancement mode MOSFET produced by Diodes Incorporated. This MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It is packaged in a SOT-23 surface mount package, which is Pb-free, halogen-free, and fully RoHS compliant. The device is also ESD protected up to 2kV and operates over a wide temperature range from -55°C to 150°C.

Key Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 μA 60 V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 μA 1.0 2.3 V
Drain-to-Source On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6
Drain-to-Source On Resistance RDS(on) VGS = 4.5 V, ID = 200 mA 1.33 2.5
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 20 V 24.5 45 pF
Output Capacitance COSS VDS = 25 V, VGS = 0 V, f = 1 MHz 4.2 4.5 pF
Total Gate Charge Qg VGS = 4.5 V, VDS = 10 V, ID = 250 mA 0.3 nC
Turn-On Delay Time tD(ON) VDD = 30 V, VGS = 10 V, RG = 25 Ω, ID = 200 mA 3.9 ns
Turn-On Rise Time tR VDD = 30 V, VGS = 10 V, RG = 25 Ω, ID = 200 mA 3.4 ns
Turn-Off Delay Time tD(OFF) VDD = 30 V, VGS = 10 V, RG = 25 Ω, ID = 200 mA 15.7 ns
Turn-Off Fall Time tF VDD = 30 V, VGS = 10 V, RG = 25 Ω, ID = 200 mA 9.9 ns
Operating Temperature Range TJ -55 150 °C
Total Power Dissipation PD TJ = 25°C 540 mW
Junction-to-Ambient Thermal Resistance RθJA Steady State 300 °C/W

Key Features

  • Low On-Resistance (RDS(ON)): Minimized on-state resistance for high-efficiency power management.
  • Low Input Capacitance: Reduces the impact on high-frequency operations.
  • Fast Switching Speed: Ensures rapid switching times, enhancing overall system performance.
  • Low Input/Output Leakage: Minimizes current leakage, contributing to energy efficiency.
  • ESD Protected up to 2kV: Provides robust protection against electrostatic discharge.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Halogen and Antimony Free: Meets the criteria for “green” devices.

Applications

  • Motor Controls: Suitable for motor control circuits due to its high efficiency and fast switching capabilities.
  • Power-Management Functions: Ideal for various power management applications requiring low on-resistance and fast switching.
  • Backlighting: Used in backlighting circuits for displays due to its efficiency and reliability.
  • Low Side Load Switch: Can be used as a low side load switch in various electronic circuits.
  • Level Shift Circuits: Suitable for level shifting applications due to its low on-resistance and fast switching speed.
  • DC-DC Converter: Used in DC-DC converter circuits for efficient power conversion.
  • Portable Applications: Ideal for portable devices such as DSC, PDA, and cell phones due to its low power consumption and high efficiency.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the 2N7002KX-7 MOSFET?

    The maximum drain-to-source breakdown voltage is 60 V.

  2. What is the typical gate threshold voltage of the 2N7002KX-7?

    The typical gate threshold voltage ranges from 1.0 to 2.3 V.

  3. What is the maximum drain current at 25°C for the 2N7002KX-7?

    The maximum drain current at 25°C is 380 mA.

  4. What is the on-resistance of the 2N7002KX-7 at VGS = 10 V and ID = 500 mA?

    The on-resistance at VGS = 10 V and ID = 500 mA is typically 1.19 mΩ to 1.6 mΩ.

  5. Is the 2N7002KX-7 ESD protected?

    Yes, the 2N7002KX-7 is ESD protected up to 2kV.

  6. What is the operating temperature range of the 2N7002KX-7?

    The operating temperature range is from -55°C to 150°C.

  7. What is the total power dissipation of the 2N7002KX-7 at 25°C?

    The total power dissipation at 25°C is 540 mW.

  8. Is the 2N7002KX-7 RoHS compliant?

    Yes, the 2N7002KX-7 is fully RoHS compliant and lead-free.

  9. What is the typical turn-on delay time of the 2N7002KX-7?

    The typical turn-on delay time is 3.9 ns.

  10. What is the typical turn-off fall time of the 2N7002KX-7?

    The typical turn-off fall time is 9.9 ns.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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