2N7002BKS,115
  • Share:

Nexperia USA Inc. 2N7002BKS,115

Manufacturer No:
2N7002BKS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.3A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002BKS,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is part of Nexperia’s extensive portfolio of MOSFETs and is designed to offer high performance and reliability in various electronic applications. The 2N7002BKS is packaged in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology for enhanced efficiency and speed.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Drain Current)300 mA
VGS(th) (Gate Threshold Voltage)1.1 V to 2.1 V
RDS(on) (Drain-Source On Resistance)1.6 Ω @ VGS = 10 V
PD (Maximum Power Dissipation)445 mW
VGS (Gate-Source Voltage)-20 V to +20 V
PackageSOT363 (SC-88)
ESD ProtectionUp to 2 kV
AEC-Q101 QualificationYes

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for improved performance
  • ESD protection up to 2 kV
  • AEC-Q101 qualified for automotive applications
  • Small SOT363 (SC-88) package for compact designs

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Automotive and industrial applications
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the maximum drain-source voltage of the 2N7002BKS? The maximum drain-source voltage is 60 V.
  2. What is the maximum drain current of the 2N7002BKS? The maximum drain current is 300 mA.
  3. What is the gate threshold voltage range of the 2N7002BKS? The gate threshold voltage range is from 1.1 V to 2.1 V.
  4. What is the typical on-resistance of the 2N7002BKS? The typical on-resistance is 1.6 Ω @ VGS = 10 V.
  5. Is the 2N7002BKS AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
  6. What is the package type of the 2N7002BKS? The package type is SOT363 (SC-88).
  7. Does the 2N7002BKS have ESD protection? Yes, it has ESD protection up to 2 kV.
  8. What are some common applications of the 2N7002BKS? Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  9. Is the 2N7002BKS RoHS compliant? Yes, it is compliant with EU RoHS and CN RoHS directives.
  10. Where can I find more detailed specifications and application notes for the 2N7002BKS? Detailed specifications and application notes can be found on Nexperia’s official website.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:300mA
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
Power - Max:295mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
0 Remaining View Similar

In Stock

$0.41
1,335

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002BKS,115 2N7002BKV,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Not For New Designs
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 300mA 340mA
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V 50pF @ 10V
Power - Max 295mW 350mW
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 SOT-563, SOT-666
Supplier Device Package 6-TSSOP SOT-666

Related Product By Categories

NTUD3170NZT5G
NTUD3170NZT5G
onsemi
MOSFET 2N-CH 20V 0.22A SOT-963
IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
CSD87352Q5D
CSD87352Q5D
Texas Instruments
MOSFET 2N-CH 30V 25A 8SON
EFC2J013NUZTDG
EFC2J013NUZTDG
onsemi
MOSFET N-CH 12V 17A WLCSP6 DUAL
FDG6301N
FDG6301N
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
NTJD4152PT2G
NTJD4152PT2G
onsemi
MOSFET 2P-CH 20V 0.88A SC88-6
BSS84DWQ-7
BSS84DWQ-7
Diodes Incorporated
BSS FAMILY SOT363 T&R 3K
STS5DNF20V
STS5DNF20V
STMicroelectronics
MOSFET 2N-CH 20V 5A 8-SOIC
MCH6663-TL-H
MCH6663-TL-H
onsemi
MOSFET N/P-CH 30V 1.8/1.5A MCPH6
2N7002PS/ZLH
2N7002PS/ZLH
Nexperia USA Inc.
MOSFET 2 N-CH 60V 320MA SOT363
2N7002DW-7-G
2N7002DW-7-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
BSS138DW-7-F-79
BSS138DW-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PMEG6020EPA,115
PMEG6020EPA,115
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A 3HUSON
PMEG3010BEAZ
PMEG3010BEAZ
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD323
PMEG2020EH/6X
PMEG2020EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
74HCT373PW-Q100,11
74HCT373PW-Q100,11
Nexperia USA Inc.
IC TRANSP LATCH OCT D 20TSSOP
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12
PESD5V0U1UL315
PESD5V0U1UL315
Nexperia USA Inc.
NOW NEXPERIA PESD5V0U1UL TRANS V