STF15N80K5
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STMicroelectronics STF15N80K5

Manufacturer No:
STF15N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 14A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF15N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of a family of MOSFETs known for their low on-resistance and ultra-low gate charge, making them ideal for applications requiring high power density and efficiency. The STF15N80K5 is packaged in a TO-220FP package, which is suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Min. Typ. Max. Unit
Maximum Drain-Source Voltage Vds - - 800 V
Maximum Gate-Source Voltage Vgs - - 30 V
Gate Threshold Voltage Vgs(th) 3 4 5 V
Maximum Drain Current Id - - 14 A
Maximum Junction Temperature Tj - - 150 °C
Static Drain-Source On-State Resistance Rds(on) 0.3 0.375 - Ω
Total Gate Charge Qg - 32 - nC
Rise Time tr - 17.6 - nS
Output Capacitance Coss - 85 - pF
Maximum Power Dissipation Pd - - 35 W

Key Features

  • Industry’s lowest RDS(on) x area, providing high efficiency and power density.
  • Industry’s best figure of merit (FoM) for superior performance.
  • Ultra-low gate charge, enhancing switching speed and efficiency.
  • 100% avalanche tested, ensuring robustness and reliability.
  • Zener-protected, eliminating the need for external protection components.

Applications

  • Switching applications, including power supplies, motor control, and power management systems.
  • High-voltage power conversion and switching circuits.
  • Industrial and automotive applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STF15N80K5?

    The maximum drain-source voltage is 800 V.

  2. What is the typical on-state resistance of the STF15N80K5?

    The typical on-state resistance (Rds(on)) is 0.375 Ω.

  3. What is the maximum drain current of the STF15N80K5?

    The maximum drain current is 14 A.

  4. What is the maximum junction temperature of the STF15N80K5?

    The maximum junction temperature is 150 °C.

  5. What technology is used in the STF15N80K5?

    The STF15N80K5 uses MDmesh™ K5 technology.

  6. What package type is the STF15N80K5 available in?

    The STF15N80K5 is available in a TO-220FP package.

  7. What are the key features of the STF15N80K5?

    The key features include industry’s lowest RDS(on) x area, ultra-low gate charge, 100% avalanche tested, and Zener-protected.

  8. What are the typical applications of the STF15N80K5?

    Typical applications include switching applications, high-voltage power conversion, and industrial and automotive systems.

  9. What is the total gate charge of the STF15N80K5?

    The total gate charge is 32 nC.

  10. What is the rise time of the STF15N80K5?

    The rise time is 17.6 nS.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:375mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF15N80K5 STF17N80K5 STF25N80K5 STF10N80K5 STF13N80K5 STF14N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 14A (Tc) 19.5A (Tc) 9A (Tc) 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 375mOhm @ 7A, 10V 340mOhm @ 7A, 10V 260mOhm @ 19.5A, 10V 600mOhm @ 4.5A, 10V 450mOhm @ 6A, 10V 445mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 250µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 26 nC @ 10 V 40 nC @ 10 V 22 nC @ 10 V 29 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 866 pF @ 100 V 1600 pF @ 100 V 635 pF @ 100 V 870 pF @ 100 V 620 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 35W (Tc) 30W (Tc) 40W (Tc) 30W (Tc) 35W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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