STF25N80K5
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STMicroelectronics STF25N80K5

Manufacturer No:
STF25N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 19.5A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF25N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure enhances the device's performance, making it suitable for a variety of high-power applications. The STF25N80K5 is known for its high voltage rating and low on-resistance, which are critical parameters for efficient power management.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
On-Resistance (Rds(on))0.190 Ohm (typ.)
Drain Current (Id)19.5 A
PackageTO-220, TO-220FP, TO-247
TechnologyMDmesh™ K5

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.190 Ohm (typ.), which reduces power losses and improves efficiency.
  • High drain current of 19.5 A, enabling the handling of significant power loads.
  • Available in various packages including TO-220, TO-220FP, and TO-247, offering flexibility in design.
  • MDmesh™ K5 technology for enhanced performance and reliability.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • Aerospace and defense applications requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the STF25N80K5? The voltage rating (Vds) of the STF25N80K5 is 800 V.
  2. What is the typical on-resistance of the STF25N80K5? The typical on-resistance (Rds(on)) is 0.190 Ohm.
  3. What is the maximum drain current of the STF25N80K5? The maximum drain current (Id) is 19.5 A.
  4. In which packages is the STF25N80K5 available? It is available in TO-220, TO-220FP, and TO-247 packages.
  5. What technology is used in the STF25N80K5? The STF25N80K5 uses MDmesh™ K5 technology.
  6. What are some common applications of the STF25N80K5? Common applications include power supplies, motor control, industrial automation, renewable energy systems, and aerospace/defense.
  7. Why is the low on-resistance important? Low on-resistance reduces power losses and improves the overall efficiency of the system.
  8. How does the MDmesh™ K5 technology benefit the STF25N80K5? MDmesh™ K5 technology enhances the device's performance and reliability by optimizing the vertical structure.
  9. Is the STF25N80K5 suitable for high-power applications? Yes, it is designed for high-power applications due to its high voltage rating and high drain current.
  10. What are the advantages of using the STF25N80K5 in power supplies? The advantages include high efficiency, low power losses, and high reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:260mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STB25N80K5
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STP25N80K5
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MOSFET N-CH 800V 19.5A TO220
STW25N80K5
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MOSFET N-CH 800V 19.5A TO247

Similar Products

Part Number STF25N80K5 STF5N80K5 STF2N80K5 STF15N80K5 STF23N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 19.5A (Tc) 4A (Ta) 2A (Tc) 14A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 19.5A, 10V 1.75Ohm @ 2A, 10V 4.5Ohm @ 1A, 10V 375mOhm @ 7A, 10V 280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 5 nC @ 10 V 3 nC @ 10 V 32 nC @ 10 V 33 nC @ 10 V
Vgs (Max) ±30V ±30V 30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V 177 pF @ 100 V 95 pF @ 100 V 1100 pF @ 100 V 1000 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 40W (Tc) 20W (Tc) 20W (Tc) 35W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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