STW25N80K5
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STMicroelectronics STW25N80K5

Manufacturer No:
STW25N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 19.5A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW25N80K5 is a high-voltage N-channel Power MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ K5 family, known for its innovative proprietary vertical structure that significantly reduces on-resistance and gate charge. The STW25N80K5 is packaged in a TO-247 package, making it suitable for applications requiring high power density and efficiency.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 800 V
Drain Current (ID) at TC = 25 °C 19.5 A
Drain Current (ID) at TC = 100 °C 12.3 A
Static Drain-Source On-Resistance (RDS(on)) 0.19 (typ.), 0.260 (max.) Ω
Gate-Source Voltage (VGS) ± 30 V
Total Dissipation at TC = 25 °C (PTOT) 250 W
Package Type TO-247

Key Features

  • Industry’s lowest RDS(on) x area, providing superior power density and high efficiency.
  • Industry’s best figure of merit (FoM) for enhanced performance.
  • Ultra-low gate charge, reducing switching losses.
  • 100% avalanche tested, ensuring robustness under extreme conditions.
  • Zener-protected, with built-in back-to-back Zener diodes to enhance ESD capability and eliminate the need for external components.

Applications

The STW25N80K5 is designed for various high-voltage switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-voltage DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage of the STW25N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance (RDS(on)) of the STW25N80K5?

    The typical on-resistance (RDS(on)) is 0.19 Ω.

  3. What is the maximum continuous drain current at 25 °C for the STW25N80K5?

    The maximum continuous drain current at 25 °C is 19.5 A.

  4. What package type is the STW25N80K5 available in?

    The STW25N80K5 is available in a TO-247 package.

  5. Does the STW25N80K5 have built-in protection against ESD?

    Yes, the STW25N80K5 has built-in back-to-back Zener diodes to enhance ESD capability.

  6. What is the total dissipation at 25 °C for the STW25N80K5?

    The total dissipation at 25 °C is 250 W.

  7. Is the STW25N80K5 100% avalanche tested?

    Yes, the STW25N80K5 is 100% avalanche tested.

  8. What are some typical applications for the STW25N80K5?

    Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.

  9. What technology is used in the STW25N80K5?

    The STW25N80K5 uses MDmesh™ K5 technology.

  10. What is the gate-source voltage range for the STW25N80K5?

    The gate-source voltage (VGS) range is ± 30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:260mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STB25N80K5
STB25N80K5
MOSFET N-CH 800V 19.5A D2PAK
STP25N80K5
STP25N80K5
MOSFET N-CH 800V 19.5A TO220
STW25N80K5
STW25N80K5
MOSFET N-CH 800V 19.5A TO247

Similar Products

Part Number STW25N80K5 STW15N80K5 STW23N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 19.5A (Tc) 14A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 19.5A, 10V 375mOhm @ 7A, 10V 280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 32 nC @ 10 V 33 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V 1100 pF @ 100 V 1000 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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