STW15N80K5
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STMicroelectronics STW15N80K5

Manufacturer No:
STW15N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 14A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW15N80K5 is a high-performance N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of a family of very high voltage Power MOSFETs that offer superior power density and high efficiency. The STW15N80K5 is packaged in a TO-247 package, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Static Drain-Source On-Resistance (RDS(on))0.3 (typ), 0.375 (max)Ω
Continuous Drain Current (ID)14 A at TC = 25 °C, 8.8 A at TC = 100 °CA
Total Dissipation (PTOT)190 WW
Gate-Source Voltage (VGS)±30V
Gate Threshold Voltage (VGS(th))3 to 5V
Operating Junction Temperature (Tj)-55 to 150°C
Thermal Resistance Junction-Case (Rthj-case)0.66°C/W

Key Features

  • Industry’s lowest RDS(on) x area and best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD capability and protection against voltage transients
  • High junction temperature rating of up to 150°C
  • Superior power density and high efficiency due to MDmesh™ K5 technology

Applications

The STW15N80K5 is designed for high-power switching applications, including but not limited to:

  • Power supplies and switch-mode power supplies (SMPS)
  • Motor control and drive systems
  • High-frequency switching circuits
  • Industrial and automotive power systems

Q & A

  1. What is the maximum drain-source voltage of the STW15N80K5?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the typical on-resistance of the STW15N80K5?
    The typical static drain-source on-resistance (RDS(on)) is 0.3 Ω.
  3. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current (ID) at TC = 25 °C is 14 A.
  4. What is the total dissipation power of the STW15N80K5?
    The total dissipation power (PTOT) is 190 W.
  5. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  6. What is the operating junction temperature range?
    The operating junction temperature (Tj) range is -55 to 150 °C.
  7. What technology is used in the STW15N80K5?
    The STW15N80K5 uses MDmesh™ K5 technology.
  8. What are the key features of the STW15N80K5?
    The key features include ultra-low gate charge, 100% avalanche testing, and Zener protection.
  9. What are the typical applications of the STW15N80K5?
    The typical applications include power supplies, motor control, high-frequency switching circuits, and industrial/automotive power systems.
  10. What package type is the STW15N80K5 available in?
    The STW15N80K5 is available in the TO-247 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:375mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STW15N80K5
STW15N80K5
MOSFET N-CH 800V 14A TO247
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STB15N80K5
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STF15N80K5
STF15N80K5
MOSFET N-CH 800V 14A TO220FP

Similar Products

Part Number STW15N80K5 STW25N80K5 STW13N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 19.5A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 375mOhm @ 7A, 10V 260mOhm @ 19.5A, 10V 450mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 40 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 1600 pF @ 100 V 870 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 190W (Tc) 250W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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