STP15N80K5
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STMicroelectronics STP15N80K5

Manufacturer No:
STP15N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 14A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP15N80K5 is a high-performance N-channel Power MOSFET designed by STMicroelectronics. It utilizes the innovative MDmesh™ K5 technology, which is based on a proprietary vertical structure. This technology enhances the device's ruggedness and performance, making it suitable for high-voltage applications. The MOSFET is Zener-protected and realized in SuperMESH™5, a revolutionary technology that provides avalanche ruggedness and very high voltage capabilities.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
Continuous Drain Current (Id)14 A
On-Resistance (Rds(on))0.375 Ω @ 10 V, 7 A
Power Dissipation (Pd)190 W
Threshold Voltage (Vth)3 V @ 100 μA
Package TypeTO-220

Key Features

  • High voltage rating of 800 V, making it suitable for high-voltage applications.
  • Low on-resistance of 0.375 Ω @ 10 V, 7 A, which reduces power losses.
  • Avalanche ruggedness due to SuperMESH™5 technology.
  • Zener protection for enhanced reliability.
  • High power dissipation of 190 W.
  • TO-220 package for easy mounting and heat dissipation.

Applications

The STP15N80K5 is designed for use in various high-voltage applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial and automotive systems.
  • High-voltage switching and power management.

Q & A

  1. What is the voltage rating of the STP15N80K5? The voltage rating of the STP15N80K5 is 800 V.
  2. What is the continuous drain current of the STP15N80K5? The continuous drain current is 14 A.
  3. What is the on-resistance of the STP15N80K5? The on-resistance is 0.375 Ω @ 10 V, 7 A.
  4. What is the power dissipation of the STP15N80K5? The power dissipation is 190 W.
  5. What package type does the STP15N80K5 use? The STP15N80K5 uses a TO-220 package.
  6. What technology is used in the STP15N80K5? The STP15N80K5 uses MDmesh™ K5 and SuperMESH™5 technologies.
  7. Is the STP15N80K5 Zener-protected? Yes, the STP15N80K5 is Zener-protected.
  8. What are some common applications of the STP15N80K5? Common applications include power supplies, motor control, industrial and automotive systems, and high-voltage switching.
  9. Where can I find the datasheet for the STP15N80K5? You can find the datasheet on the STMicroelectronics website or through distributors like Digi-Key and Mouser.
  10. Is the STP15N80K5 RoHS compliant? Yes, the STP15N80K5 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:375mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STW15N80K5
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MOSFET N-CH 800V 14A TO247
STB15N80K5
STB15N80K5
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STF15N80K5
STF15N80K5
MOSFET N-CH 800V 14A TO220FP

Similar Products

Part Number STP15N80K5 STP17N80K5 STP10N80K5 STP13N80K5 STP14N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 14A (Tc) 9A (Tc) 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 375mOhm @ 7A, 10V 340mOhm @ 7A, 10V 600mOhm @ 4.5A, 10V 450mOhm @ 6A, 10V 445mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 250µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 26 nC @ 10 V 22 nC @ 10 V 29 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 866 pF @ 100 V 635 pF @ 100 V 870 pF @ 100 V 620 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 190W (Tc) 170W (Tc) 130W (Tc) 190W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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