Overview
The STP13N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This MOSFET is part of the MDmesh K5 series, known for its high performance and reliability. It is packaged in a TO-220 package, making it suitable for a variety of power management applications. The STP13N80K5 is characterized by its high voltage rating, low on-state resistance, and high current handling capabilities, making it an ideal choice for applications requiring efficient power switching and control.
Key Specifications
| Parameter | Value |
|---|---|
| Type of Transistor | MOSFET |
| Type of Control Channel | N-Channel |
| Maximum Drain-Source Voltage (Vds) | 800 V |
| Maximum Gate-Source Voltage (Vgs) | 30 V |
| Maximum Drain Current (Id) | 12 A |
| Maximum Junction Temperature (Tj) | 150 °C |
| Rise Time (tr) | 16 nS |
| Output Capacitance (Coss) | 50 pF |
| Maximum Drain-Source On-State Resistance (Rds(on)) | 0.45 Ohm (typ.) |
| Maximum Power Dissipation (Pd) | 190 W |
| Package | TO-220 |
Key Features
- High voltage rating of 800 V, making it suitable for high-power applications.
- Low on-state resistance (Rds(on)) of 0.45 Ohm (typ.), ensuring minimal power loss during operation.
- High current handling capability of up to 12 A.
- MDmesh K5 technology for improved performance and reliability.
- High maximum junction temperature of 150 °C, allowing for operation in demanding environments.
- Fast switching times with a rise time of 16 nS.
- Compact TO-220 package for easy integration into various systems.
Applications
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-power switching applications.
- Aerospace and defense systems.
- Industrial automation and control systems.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain-source voltage of the STP13N80K5?
The maximum drain-source voltage (Vds) is 800 V.
- What is the typical on-state resistance (Rds(on)) of the STP13N80K5?
The typical on-state resistance (Rds(on)) is 0.45 Ohm.
- What is the maximum drain current (Id) of the STP13N80K5?
The maximum drain current (Id) is 12 A.
- What is the maximum junction temperature (Tj) of the STP13N80K5?
The maximum junction temperature (Tj) is 150 °C.
- What is the rise time (tr) of the STP13N80K5?
The rise time (tr) is 16 nS.
- What is the output capacitance (Coss) of the STP13N80K5?
The output capacitance (Coss) is 50 pF.
- In what package is the STP13N80K5 available?
The STP13N80K5 is available in a TO-220 package.
- What technology is used in the STP13N80K5?
The STP13N80K5 uses MDmesh K5 technology.
- What are some typical applications for the STP13N80K5?
Typical applications include power supplies, motor control, high-power switching, aerospace and defense systems, industrial automation, and renewable energy systems.
- What is the maximum power dissipation (Pd) of the STP13N80K5?
The maximum power dissipation (Pd) is 190 W.
