STB15N80K5
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STMicroelectronics STB15N80K5

Manufacturer No:
STB15N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 800V 14A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB15N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of a series that includes the STF15N80K5, STP15N80K5, and STW15N80K5, each available in different packages such as D2PAK, TO-220FP, TO-220, and TO-247. The STB15N80K5 is characterized by its very high voltage rating of 800 V, low on-resistance of 0.375 Ω, and high current capability of 14 A. These features make it ideal for applications requiring superior power density and high efficiency.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VBRDSS) 800 V
Static Drain-Source On-Resistance (RDS(on)) 0.3 - 0.375 Ω
Continuous Drain Current (ID) at TC = 25 °C 14 A
Continuous Drain Current (ID) at TC = 100 °C 8.8 A
Pulsed Drain Current (IDM) 56 A
Total Dissipation (PTOT) at TC = 25 °C 190 W
Gate Threshold Voltage (VGS(th)) 3 - 5 V
Gate-Source Voltage (VGS) ±30 V
Operating Junction Temperature (Tj) -55 to 150 °C
Storage Temperature (Tstg) -55 to 150 °C

Key Features

  • Industry’s lowest RDS(on) x area and best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD capability and protection against voltage transients
  • Available in D2PAK, TO-220FP, TO-220, and TO-247 packages
  • ECOPACK® compliant for environmental sustainability

Applications

The STB15N80K5 is primarily used in switching applications where high power density and efficiency are crucial. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Aerospace and defense applications

Q & A

  1. What is the maximum drain-source breakdown voltage of the STB15N80K5?

    The maximum drain-source breakdown voltage is 800 V.

  2. What is the typical on-resistance of the STB15N80K5?

    The typical on-resistance is 0.3 Ω.

  3. What is the maximum continuous drain current at TC = 25 °C?

    The maximum continuous drain current is 14 A.

  4. What is the gate threshold voltage range of the STB15N80K5?

    The gate threshold voltage range is 3 to 5 V.

  5. Is the STB15N80K5 protected against voltage transients?
  6. In which packages is the STB15N80K5 available?

    The STB15N80K5 is available in D2PAK, TO-220FP, TO-220, and TO-247 packages.

  7. What is the maximum operating junction temperature of the STB15N80K5?

    The maximum operating junction temperature is 150 °C.

  8. Is the STB15N80K5 environmentally compliant?
  9. What are the typical switching times for the STB15N80K5?

    The turn-on delay time is approximately 19 ns, rise time is 17.6 ns, turn-off delay time is 44 ns, and fall time is 10 ns.

  10. What are some common applications of the STB15N80K5?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:375mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STP15N80K5
STP15N80K5
MOSFET N-CH 800V 14A TO220
STW15N80K5
STW15N80K5
MOSFET N-CH 800V 14A TO247
STB15N80K5
STB15N80K5
MOSFET N CH 800V 14A D2PAK

Similar Products

Part Number STB15N80K5 STB17N80K5 STB25N80K5 STB13N80K5 STB14N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 14A (Tc) 19.5A (Tc) 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 375mOhm @ 7A, 10V 340mOhm @ 7A, 10V 260mOhm @ 19.5A, 10V 450mOhm @ 6A, 10V 445mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 250µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 26 nC @ 10 V 40 nC @ 10 V 29 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 866 pF @ 100 V 1600 pF @ 100 V 870 pF @ 100 V 620 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 190W (Tc) 170W (Tc) 250W (Tc) 190W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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