BC817K25WE6327HTSA1
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Infineon Technologies BC817K25WE6327HTSA1

Manufacturer No:
BC817K25WE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BC817K25WE6327HTSA1 is an NPN silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is designed for general-purpose applications and is known for its high performance and reliability. It is packaged in a SOT-323 format, which is Pb-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Value
Type NPN Silicon AF Transistor
Collector-Base Voltage (Vcbo) 45 V
Collector-Emitter Voltage (Vceo) 45 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 0.5 A
Current Gain (hfe) High current gain
Collector-Emitter Saturation Voltage (Vce(sat)) Low
Package SOT-323, Pb-free (RoHS compliant)
Qualification AEC Q102 qualified

Key Features

The BC817K25WE6327HTSA1 boasts several key features that make it a versatile and reliable component:

  • High Collector Current: Capable of handling up to 0.5 A, making it suitable for a variety of applications.
  • High Current Gain: Ensures efficient amplification and switching operations.
  • Low Collector-Emitter Saturation Voltage: Minimizes power loss and enhances overall efficiency.
  • Pb-free (RoHS compliant) Package: Environmentally friendly and compliant with regulatory standards.
  • AEC Q102 Qualified: Meets automotive industry standards for reliability and performance.

Applications

The BC817K25WE6327HTSA1 is primarily used in general AF (Audio Frequency) applications. It is suitable for:

  • Audio amplifiers and audio circuits
  • General-purpose switching and amplification
  • Automotive electronics due to its AEC Q102 qualification

Q & A

  1. What is the type of the BC817K25WE6327HTSA1 transistor?

    The BC817K25WE6327HTSA1 is an NPN silicon AF (Audio Frequency) transistor.

  2. What is the maximum collector current of the BC817K25WE6327HTSA1?

    The maximum collector current is 0.5 A.

  3. What is the package type of the BC817K25WE6327HTSA1?

    The transistor is packaged in a SOT-323 format.

  4. Is the BC817K25WE6327HTSA1 RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What are the key features of the BC817K25WE6327HTSA1?

    High collector current, high current gain, low collector-emitter saturation voltage, and AEC Q102 qualification).

  6. What are the typical applications of the BC817K25WE6327HTSA1?

    General AF applications, audio amplifiers, and automotive electronics).

  7. What is the collector-emitter voltage rating of the BC817K25WE6327HTSA1?

    The collector-emitter voltage rating is 45 V).

  8. Is the BC817K25WE6327HTSA1 suitable for automotive applications?

    Yes, it is AEC Q102 qualified, making it suitable for automotive applications).

  9. What is the emitter-base voltage rating of the BC817K25WE6327HTSA1?

    The emitter-base voltage rating is 5 V).

  10. Where can I find detailed specifications for the BC817K25WE6327HTSA1?

    Detailed specifications can be found on the official Infineon Technologies website and other authorized distributors like Mouser and South Electronics).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC817K25WE6327HTSA1 BC817K25E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 250 mW 500 mW
Frequency - Transition 170MHz 170MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323 PG-SOT23

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