BC817K25WH6433XTMA1
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Infineon Technologies BC817K25WH6433XTMA1

Manufacturer No:
BC817K25WH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K25WH6433XTMA1 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC817K series and is designed for a wide range of applications, including amplifiers and general-purpose switching. It features a compact SOT-323 (SC-70) package, making it suitable for surface mount technology (SMT) and space-constrained designs.

This transistor is characterized by its high collector-emitter voltage (VCEO) of 45V, maximum collector current (IC) of 500mA, and a transition frequency of 170MHz. It is also RoHS compliant and lead-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 500 mA
Peak Collector Current (ICM) 1000 mA
DC Current Gain (hFE) @ IC=100mA, VCE=1V 160 -
Collector-Emitter Saturation Voltage (VCEsat) @ IC=500mA, IB=50mA 700mV -
Base-Emitter Saturation Voltage (VBEsat) @ IC=500mA, IB=50mA 1.2V -
Transition Frequency (fT) 170 MHz
Maximum Power Dissipation 250 mW
Operating Temperature (TJ) 150 °C
Package / Case SOT-323 (SC-70) -
Mounting Type Surface Mount -

Key Features

  • High Collector-Emitter Voltage: Up to 45V, making it suitable for a variety of applications requiring high voltage handling.
  • High Collector Current: Maximum collector current of 500mA, suitable for applications requiring moderate to high current levels.
  • High Transition Frequency: 170MHz, which is beneficial for high-frequency applications.
  • Compact Package: SOT-323 (SC-70) package, ideal for space-constrained designs and surface mount technology.
  • RoHS Compliant and Lead-Free: Ensures environmental sustainability and compliance with regulatory standards.
  • High DC Current Gain: Minimum DC current gain (hFE) of 160 at IC=100mA and VCE=1V, indicating good amplification capabilities.

Applications

  • Amplifiers: Suitable for general-purpose amplification due to its high DC current gain and moderate power handling.
  • Switching Circuits: Can be used in switching applications due to its high transition frequency and moderate collector current.
  • Automotive Electronics: Given its robust specifications, it can be used in various automotive electronic systems.
  • Consumer Electronics: Applicable in a wide range of consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC817K25WH6433XTMA1 transistor?

    The maximum collector-emitter voltage (VCEO) is 45V.

  2. What is the maximum collector current (IC) of the BC817K25WH6433XTMA1 transistor?

    The maximum collector current (IC) is 500mA.

  3. What is the transition frequency (fT) of the BC817K25WH6433XTMA1 transistor?

    The transition frequency (fT) is 170MHz.

  4. What is the package type of the BC817K25WH6433XTMA1 transistor?

    The package type is SOT-323 (SC-70).

  5. Is the BC817K25WH6433XTMA1 transistor RoHS compliant?

    Yes, the BC817K25WH6433XTMA1 transistor is RoHS compliant and lead-free.

  6. What is the maximum operating temperature of the BC817K25WH6433XTMA1 transistor?

    The maximum operating temperature (TJ) is 150°C.

  7. What is the minimum DC current gain (hFE) of the BC817K25WH6433XTMA1 transistor?

    The minimum DC current gain (hFE) is 160 at IC=100mA and VCE=1V.

  8. What is the collector-emitter saturation voltage (VCEsat) of the BC817K25WH6433XTMA1 transistor?

    The collector-emitter saturation voltage (VCEsat) is 700mV at IC=500mA and IB=50mA.

  9. What is the base-emitter saturation voltage (VBEsat) of the BC817K25WH6433XTMA1 transistor?

    The base-emitter saturation voltage (VBEsat) is 1.2V at IC=500mA and IB=50mA.

  10. What are the typical applications of the BC817K25WH6433XTMA1 transistor?

    The BC817K25WH6433XTMA1 transistor is typically used in amplifiers, switching circuits, automotive electronics, and consumer electronics.

  11. Is the BC817K25WH6433XTMA1 transistor suitable for new designs?

    No, the BC817K25WH6433XTMA1 transistor is not recommended for new designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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