BC817K25WH6433XTMA1
  • Share:

Infineon Technologies BC817K25WH6433XTMA1

Manufacturer No:
BC817K25WH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K25WH6433XTMA1 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC817K series and is designed for a wide range of applications, including amplifiers and general-purpose switching. It features a compact SOT-323 (SC-70) package, making it suitable for surface mount technology (SMT) and space-constrained designs.

This transistor is characterized by its high collector-emitter voltage (VCEO) of 45V, maximum collector current (IC) of 500mA, and a transition frequency of 170MHz. It is also RoHS compliant and lead-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 500 mA
Peak Collector Current (ICM) 1000 mA
DC Current Gain (hFE) @ IC=100mA, VCE=1V 160 -
Collector-Emitter Saturation Voltage (VCEsat) @ IC=500mA, IB=50mA 700mV -
Base-Emitter Saturation Voltage (VBEsat) @ IC=500mA, IB=50mA 1.2V -
Transition Frequency (fT) 170 MHz
Maximum Power Dissipation 250 mW
Operating Temperature (TJ) 150 °C
Package / Case SOT-323 (SC-70) -
Mounting Type Surface Mount -

Key Features

  • High Collector-Emitter Voltage: Up to 45V, making it suitable for a variety of applications requiring high voltage handling.
  • High Collector Current: Maximum collector current of 500mA, suitable for applications requiring moderate to high current levels.
  • High Transition Frequency: 170MHz, which is beneficial for high-frequency applications.
  • Compact Package: SOT-323 (SC-70) package, ideal for space-constrained designs and surface mount technology.
  • RoHS Compliant and Lead-Free: Ensures environmental sustainability and compliance with regulatory standards.
  • High DC Current Gain: Minimum DC current gain (hFE) of 160 at IC=100mA and VCE=1V, indicating good amplification capabilities.

Applications

  • Amplifiers: Suitable for general-purpose amplification due to its high DC current gain and moderate power handling.
  • Switching Circuits: Can be used in switching applications due to its high transition frequency and moderate collector current.
  • Automotive Electronics: Given its robust specifications, it can be used in various automotive electronic systems.
  • Consumer Electronics: Applicable in a wide range of consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC817K25WH6433XTMA1 transistor?

    The maximum collector-emitter voltage (VCEO) is 45V.

  2. What is the maximum collector current (IC) of the BC817K25WH6433XTMA1 transistor?

    The maximum collector current (IC) is 500mA.

  3. What is the transition frequency (fT) of the BC817K25WH6433XTMA1 transistor?

    The transition frequency (fT) is 170MHz.

  4. What is the package type of the BC817K25WH6433XTMA1 transistor?

    The package type is SOT-323 (SC-70).

  5. Is the BC817K25WH6433XTMA1 transistor RoHS compliant?

    Yes, the BC817K25WH6433XTMA1 transistor is RoHS compliant and lead-free.

  6. What is the maximum operating temperature of the BC817K25WH6433XTMA1 transistor?

    The maximum operating temperature (TJ) is 150°C.

  7. What is the minimum DC current gain (hFE) of the BC817K25WH6433XTMA1 transistor?

    The minimum DC current gain (hFE) is 160 at IC=100mA and VCE=1V.

  8. What is the collector-emitter saturation voltage (VCEsat) of the BC817K25WH6433XTMA1 transistor?

    The collector-emitter saturation voltage (VCEsat) is 700mV at IC=500mA and IB=50mA.

  9. What is the base-emitter saturation voltage (VBEsat) of the BC817K25WH6433XTMA1 transistor?

    The base-emitter saturation voltage (VBEsat) is 1.2V at IC=500mA and IB=50mA.

  10. What are the typical applications of the BC817K25WH6433XTMA1 transistor?

    The BC817K25WH6433XTMA1 transistor is typically used in amplifiers, switching circuits, automotive electronics, and consumer electronics.

  11. Is the BC817K25WH6433XTMA1 transistor suitable for new designs?

    No, the BC817K25WH6433XTMA1 transistor is not recommended for new designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

$0.06
15,118

Please send RFQ , we will respond immediately.

Same Series
BC817K25E6327HTSA1
BC817K25E6327HTSA1
TRANS NPN 45V 0.5A SOT23
BC817K16E6327HTSA1
BC817K16E6327HTSA1
TRANS NPN 45V 0.5A SOT23
BC817K40E6433HTMA1
BC817K40E6433HTMA1
TRANS NPN 45V 0.5A SOT23
BC817K25E6433HTMA1
BC817K25E6433HTMA1
TRANS NPN 45V 0.5A SOT23
BC817K25WH6327XTSA1
BC817K25WH6327XTSA1
TRANS NPN 45V 0.5A SOT323
BC817K40WH6327XTSA1
BC817K40WH6327XTSA1
TRANS NPN 45V 0.5A SOT323
BC818K16WH6327XTSA1
BC818K16WH6327XTSA1
TRANS NPN 25V 0.5A SOT323
BC 817-25W E6327
BC 817-25W E6327
TRANS NPN 45V 0.5A SOT323
BC 817-40W E6327
BC 817-40W E6327
TRANS NPN 45V 0.5A SOT323
BC 817-25 B5003
BC 817-25 B5003
TRANS NPN 45V 0.5A SOT23
BC 817K-25W E6433
BC 817K-25W E6433
TRANS NPN 45V 0.5A SOT323
BC 818K-25 E6327
BC 818K-25 E6327
TRANS NPN 25V 0.5A SOT23

Related Product By Categories

BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
MMBT2222AT
MMBT2222AT
Fairchild Semiconductor
TRANS NPN 40V 0.6A SOT523F
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS40-06E6327
BAS40-06E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BAS40-06B5000
BAS40-06B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCX52E6327HTSA1
BCX52E6327HTSA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC 856B E6327
BC 856B E6327
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
IRLML6346TRPBF
IRLML6346TRPBF
Infineon Technologies
MOSFET N-CH 30V 3.4A SOT23
BSS84PW L6327
BSS84PW L6327
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3