STD18N65M5
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STMicroelectronics STD18N65M5

Manufacturer No:
STD18N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 15A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD18N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the well-known PowerMESH horizontal layout. This device is particularly suited for applications requiring high power and superior efficiency due to its extremely low on-resistance. It is packaged in a DPAK package and is available in tape and reel packing.

Key Specifications

Parameter Value Unit
Order Code STD18N65M5
Drain-Source Breakdown Voltage (VDS) 650 V
Static Drain-Source On-Resistance (RDS(on)) 0.198 (typ.), 0.22 (max.) Ω
Continuous Drain Current (ID) at TJ = 25°C 15 A
Continuous Drain Current (ID) at TJ = 100°C 9.4 A
Pulsed Drain Current 60 A
Total Dissipation at TJ = 25°C 110 W
Operating Junction Temperature Range -55 to 150 °C
Gate-Source Voltage (VGS) ±25 V
Gate Threshold Voltage (VGS(th)) 3 to 5 V

Key Features

  • Extremely low RDS(on) (0.198 Ω typical, 0.22 Ω maximum)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • Higher VDSS rating and high dv/dt capability

Applications

  • Switching applications, particularly in high-power PFC and PWM topologies

Q & A

  1. What is the maximum drain-source breakdown voltage of the STD18N65M5?

    The maximum drain-source breakdown voltage is 650 V.

  2. What is the typical on-resistance of the STD18N65M5?

    The typical on-resistance is 0.198 Ω, with a maximum of 0.22 Ω.

  3. What is the continuous drain current rating at 25°C for the STD18N65M5?

    The continuous drain current rating at 25°C is 15 A.

  4. What is the operating junction temperature range for the STD18N65M5?

    The operating junction temperature range is -55 to 150°C.

  5. What are the key features of the STD18N65M5?

    The key features include extremely low RDS(on), low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.

  6. What are the typical applications for the STD18N65M5?

    The STD18N65M5 is typically used in switching applications, especially in high-power PFC and PWM topologies.

  7. What package type is the STD18N65M5 available in?

    The STD18N65M5 is available in a DPAK package.

  8. What is the total dissipation at 25°C for the STD18N65M5?

    The total dissipation at 25°C is 110 W.

  9. What is the gate-source voltage rating for the STD18N65M5?

    The gate-source voltage rating is ±25 V.

  10. What is the gate threshold voltage range for the STD18N65M5?

    The gate threshold voltage range is 3 to 5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1240 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STD18N65M5
STD18N65M5
MOSFET N-CH 650V 15A DPAK

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Part Number STD18N65M5 STD11N65M5 STD12N65M5 STD15N65M5 STD16N65M5 STD18N55M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 550 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 9A (Tc) 8.5A (Tc) 11A (Tc) 12A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 7.5A, 10V 480mOhm @ 4.5A, 10V 430mOhm @ 4.3A, 10V 340mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 192mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V 45 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1240 pF @ 100 V 620 pF @ 100 V 900 pF @ 100 V 816 pF @ 100 V 1250 pF @ 100 V 1260 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 110W (Tc) 85W (Tc) 70W (Tc) 85W (Tc) 90W (Tc) 110W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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