Overview
The STD18N55M5 is an N-channel Power MOSFET produced by STMicroelectronics. This device is based on the innovative MDmesh M5 vertical process technology combined with the well-known PowerMESH horizontal layout. This combination results in extremely low on-resistance, making the STD18N55M5 particularly suitable for applications requiring high power and superior efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| ID (Drain Current, continuous at TC = 25°C) | 16 | A |
| ID (Drain Current, continuous at TC = 100°C) | 10 | A |
| IDM (Drain Current, pulsed) | 64 | A |
| PTOT (Total Power Dissipation at TC = 25°C) | 110 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| RDS(on) (Static Drain-Source On Resistance) | 150 - 192 | mΩ |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| TJ (Operating Junction Temperature Range) | -55 to 150 | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 1.14 | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 62.5 | °C/W |
Key Features
- Extremely low RDS(on) (Static Drain-Source On Resistance) of 150 - 192 mΩ.
- Low gate charge and input capacitance.
- Excellent switching performance.
- 100% avalanche tested.
- High power handling capability with a total power dissipation of 110 W at TC = 25°C.
- Wide operating junction temperature range from -55°C to 150°C.
- Available in DPAK and TO-220 packages, meeting various environmental compliance standards through ECOPACK packages.
Applications
The STD18N55M5 is particularly suited for switching applications that require high power and superior efficiency. These include:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Aerospace and industrial power systems.
Q & A
- What is the maximum drain-source voltage of the STD18N55M5?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 16 A at TC = 25°C and 10 A at TC = 100°C.
- What is the typical static drain-source on-resistance (RDS(on))?
The typical RDS(on) is 150 - 192 mΩ.
- What are the storage and operating junction temperature ranges?
The storage temperature range is -55°C to 150°C, and the operating junction temperature range is also -55°C to 150°C.
- What is the total power dissipation at TC = 25°C?
The total power dissipation (PTOT) is 110 W at TC = 25°C.
- What are the key features of the STD18N55M5?
The key features include extremely low RDS(on), low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
- In what packages is the STD18N55M5 available?
The STD18N55M5 is available in DPAK and TO-220 packages.
- What are some typical applications for the STD18N55M5?
Typical applications include power supplies, DC-DC converters, motor control and drive systems, and high-frequency switching circuits.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 1.14 °C/W.
- What is the thermal resistance from junction to ambient (RthJA)?
The thermal resistance from junction to ambient (RthJA) is 62.5 °C/W.
