Overview
The STD11N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is based on the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This combination results in extremely low on-resistance, making the device particularly suitable for applications requiring high power and superior efficiency.
The STD11N65M5 is available in various packages, including DPAK, TO-220, and TO-220FP, catering to different design and mounting requirements. It is 100% avalanche tested, ensuring robustness and reliability in demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 650 | V |
| Gate-Source Voltage (Vgs) | ±25 | V |
| Drain Current (continuous) at TC = 25 °C | 9 | A |
| Drain Current (continuous) at TC = 100 °C | 5.6 | A |
| Pulsed Drain Current | 36 | A |
| Total Dissipation at TC = 25 °C | 85 | W |
| Maximum Junction Temperature | 150 | °C |
| Gate Threshold Voltage | 3 - 5 | V |
| Static Drain-Source On-Resistance (Rds(on)) | 0.43 - 0.48 | Ω |
| Total Gate Charge (Qg) | 17 | nC |
| Output Capacitance (Coss) | 20 | pF |
| Package | DPAK, TO-220, TO-220FP |
Key Features
- Extremely low Rds(on) of 0.43 - 0.48 Ω, ensuring high efficiency and low power losses.
- Low gate charge and input capacitance, facilitating excellent switching performance.
- 100% avalanche tested, providing robustness against transient conditions.
- High drain-source breakdown voltage of 650 V, suitable for high-voltage applications.
- Available in DPAK, TO-220, and TO-220FP packages, offering flexibility in design and mounting.
- Maximum junction temperature of 150 °C, allowing operation in a wide range of thermal conditions.
Applications
The STD11N65M5 is designed for various high-power applications that require superior efficiency and reliability. Some of the key applications include:
- Switching power supplies and converters.
- Motor control and drive systems.
- High-frequency inverters and resonant converters.
- Power factor correction (PFC) circuits.
- Industrial and automotive power systems.
Q & A
- What is the maximum drain-source voltage of the STD11N65M5?
The maximum drain-source voltage (Vds) is 650 V.
- What is the typical on-resistance (Rds(on)) of the STD11N65M5?
The typical on-resistance (Rds(on)) is 0.43 - 0.48 Ω.
- What are the available packages for the STD11N65M5?
The device is available in DPAK, TO-220, and TO-220FP packages.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 9 A.
- What is the maximum junction temperature for the STD11N65M5?
The maximum junction temperature is 150 °C.
- Is the STD11N65M5 100% avalanche tested?
Yes, the device is 100% avalanche tested.
- What is the total gate charge (Qg) of the STD11N65M5?
The total gate charge (Qg) is 17 nC.
- What are some typical applications for the STD11N65M5?
Typical applications include switching power supplies, motor control, high-frequency inverters, and power factor correction (PFC) circuits.
- What is the maximum power dissipation at 25 °C?
The maximum power dissipation at 25 °C is 85 W.
- What is the gate-source voltage range for the STD11N65M5?
The gate-source voltage range is ±25 V.
