STD11N65M2
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STMicroelectronics STD11N65M2

Manufacturer No:
STD11N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 7A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD11N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. The STD11N65M2 features a strip layout and an improved vertical structure, which enhance its electrical characteristics and thermal management.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 0.60 Ohm (typ.)
ID (Drain Current) 7 A (Tc)
Ptot (Total Power Dissipation) 85 W (Tc)
Package DPAK

Key Features

  • MDmesh M2 technology for improved performance and reliability
  • High voltage rating of 650 V
  • Low on-resistance of 0.60 Ohm (typ.)
  • High drain current of 7 A (Tc)
  • High total power dissipation of 85 W (Tc)
  • DPAK package for surface mount applications

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial and consumer electronics
  • Aerospace and automotive systems
  • High-frequency switching applications

Q & A

  1. What is the drain-source voltage rating of the STD11N65M2?

    The drain-source voltage rating is 650 V.

  2. What is the typical on-resistance of the STD11N65M2?

    The typical on-resistance is 0.60 Ohm.

  3. What is the maximum drain current of the STD11N65M2?

    The maximum drain current is 7 A (Tc).

  4. What is the total power dissipation of the STD11N65M2?

    The total power dissipation is 85 W (Tc).

  5. In what package is the STD11N65M2 available?

    The STD11N65M2 is available in a DPAK package.

  6. What technology is used in the STD11N65M2?

    The STD11N65M2 uses the MDmesh M2 technology.

  7. What are some common applications of the STD11N65M2?

    Common applications include power supplies, motor control, industrial and consumer electronics, aerospace, and automotive systems.

  8. Is the STD11N65M2 suitable for high-frequency switching applications?

    Yes, the STD11N65M2 is suitable for high-frequency switching applications.

  9. Where can I find detailed specifications for the STD11N65M2?

    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through authorized distributors like Digi-Key and Mouser.

  10. What is the significance of the MDmesh M2 technology in the STD11N65M2?

    The MDmesh M2 technology enhances the electrical characteristics and thermal management of the device, providing improved performance and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STU11N65M2
STU11N65M2
MOSFET N-CH 650V 7A IPAK
STP11N65M2
STP11N65M2
MOSFET N-CH 650V 7A TO220

Similar Products

Part Number STD11N65M2 STD12N65M2 STD11N65M5 STD16N65M2 STD13N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 8A (Tc) 9A (Tc) 11A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V 500mOhm @ 4A, 10V 480mOhm @ 4.5A, 10V 360mOhm @ 5.5A, 10V 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 16.5 nC @ 10 V 17 nC @ 10 V 19.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V 535 pF @ 100 V 620 pF @ 100 V 718 pF @ 100 V 590 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 85W (Tc) 85W (Tc) 85W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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