STD11N65M2
  • Share:

STMicroelectronics STD11N65M2

Manufacturer No:
STD11N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 7A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD11N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. The STD11N65M2 features a strip layout and an improved vertical structure, which enhance its electrical characteristics and thermal management.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 0.60 Ohm (typ.)
ID (Drain Current) 7 A (Tc)
Ptot (Total Power Dissipation) 85 W (Tc)
Package DPAK

Key Features

  • MDmesh M2 technology for improved performance and reliability
  • High voltage rating of 650 V
  • Low on-resistance of 0.60 Ohm (typ.)
  • High drain current of 7 A (Tc)
  • High total power dissipation of 85 W (Tc)
  • DPAK package for surface mount applications

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial and consumer electronics
  • Aerospace and automotive systems
  • High-frequency switching applications

Q & A

  1. What is the drain-source voltage rating of the STD11N65M2?

    The drain-source voltage rating is 650 V.

  2. What is the typical on-resistance of the STD11N65M2?

    The typical on-resistance is 0.60 Ohm.

  3. What is the maximum drain current of the STD11N65M2?

    The maximum drain current is 7 A (Tc).

  4. What is the total power dissipation of the STD11N65M2?

    The total power dissipation is 85 W (Tc).

  5. In what package is the STD11N65M2 available?

    The STD11N65M2 is available in a DPAK package.

  6. What technology is used in the STD11N65M2?

    The STD11N65M2 uses the MDmesh M2 technology.

  7. What are some common applications of the STD11N65M2?

    Common applications include power supplies, motor control, industrial and consumer electronics, aerospace, and automotive systems.

  8. Is the STD11N65M2 suitable for high-frequency switching applications?

    Yes, the STD11N65M2 is suitable for high-frequency switching applications.

  9. Where can I find detailed specifications for the STD11N65M2?

    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through authorized distributors like Digi-Key and Mouser.

  10. What is the significance of the MDmesh M2 technology in the STD11N65M2?

    The MDmesh M2 technology enhances the electrical characteristics and thermal management of the device, providing improved performance and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.86
54

Please send RFQ , we will respond immediately.

Same Series
STU11N65M2
STU11N65M2
MOSFET N-CH 650V 7A IPAK
STP11N65M2
STP11N65M2
MOSFET N-CH 650V 7A TO220

Similar Products

Part Number STD11N65M2 STD12N65M2 STD11N65M5 STD16N65M2 STD13N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 8A (Tc) 9A (Tc) 11A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V 500mOhm @ 4A, 10V 480mOhm @ 4.5A, 10V 360mOhm @ 5.5A, 10V 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 16.5 nC @ 10 V 17 nC @ 10 V 19.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V 535 pF @ 100 V 620 pF @ 100 V 718 pF @ 100 V 590 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 85W (Tc) 85W (Tc) 85W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3

Related Product By Brand

Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK