STD12N65M2
  • Share:

STMicroelectronics STD12N65M2

Manufacturer No:
STD12N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD12N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. With its strip layout and improved vertical structure, the STD12N65M2 provides excellent electrical characteristics, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
ID (Drain Current) 8 A
RDS(on) (On-Resistance) 420 mΩ (typ.)
PD (Power Dissipation) 85 W
TJ (Junction Temperature) 150 °C
Package TO-252 (DPAK), Surface Mount

Key Features

  • Extremely low gate charge, enhancing switching performance.
  • Excellent output capacitance (COSS) profile, reducing switching losses.
  • 100% avalanche tested, ensuring robustness under high stress conditions.
  • Zener-protected gate, providing protection against voltage spikes.
  • MDmesh M2 technology for improved electrical characteristics and reliability.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high power efficiency.
  • Aerospace and defense applications where reliability is critical.

Q & A

  1. What is the maximum drain-source voltage of the STD12N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STD12N65M2?

    The typical on-resistance (RDS(on)) is 420 mΩ.

  3. What is the maximum drain current of the STD12N65M2?

    The maximum drain current (ID) is 8 A.

  4. What is the package type of the STD12N65M2?

    The package type is TO-252 (DPAK), surface mount.

  5. What technology is used in the STD12N65M2?

    The STD12N65M2 uses MDmesh M2 technology.

  6. Is the STD12N65M2 Zener-protected?
  7. What is the maximum junction temperature of the STD12N65M2?

    The maximum junction temperature (TJ) is 150 °C.

  8. What are some common applications of the STD12N65M2?

    Common applications include power supplies, motor control, industrial automation, and consumer electronics requiring high power efficiency.

  9. Is the STD12N65M2 100% avalanche tested?
  10. What is the power dissipation capability of the STD12N65M2?

    The power dissipation (PD) is 85 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.90
81

Please send RFQ , we will respond immediately.

Similar Products

Part Number STD12N65M2 STD16N65M2 STD13N65M2 STD12N65M5 STD11N65M2 STD12N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 11A (Tc) 10A (Tc) 8.5A (Tc) 7A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V 360mOhm @ 5.5A, 10V 430mOhm @ 5A, 10V 430mOhm @ 4.3A, 10V 670mOhm @ 3.5A, 10V 450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V 19.5 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V 12.5 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 100 V 718 pF @ 100 V 590 pF @ 100 V 900 pF @ 100 V 410 pF @ 100 V 538 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 110W (Tc) 70W (Tc) 85W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI

Related Product By Brand

STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA