STD12N65M2
  • Share:

STMicroelectronics STD12N65M2

Manufacturer No:
STD12N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD12N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. With its strip layout and improved vertical structure, the STD12N65M2 provides excellent electrical characteristics, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
ID (Drain Current) 8 A
RDS(on) (On-Resistance) 420 mΩ (typ.)
PD (Power Dissipation) 85 W
TJ (Junction Temperature) 150 °C
Package TO-252 (DPAK), Surface Mount

Key Features

  • Extremely low gate charge, enhancing switching performance.
  • Excellent output capacitance (COSS) profile, reducing switching losses.
  • 100% avalanche tested, ensuring robustness under high stress conditions.
  • Zener-protected gate, providing protection against voltage spikes.
  • MDmesh M2 technology for improved electrical characteristics and reliability.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high power efficiency.
  • Aerospace and defense applications where reliability is critical.

Q & A

  1. What is the maximum drain-source voltage of the STD12N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STD12N65M2?

    The typical on-resistance (RDS(on)) is 420 mΩ.

  3. What is the maximum drain current of the STD12N65M2?

    The maximum drain current (ID) is 8 A.

  4. What is the package type of the STD12N65M2?

    The package type is TO-252 (DPAK), surface mount.

  5. What technology is used in the STD12N65M2?

    The STD12N65M2 uses MDmesh M2 technology.

  6. Is the STD12N65M2 Zener-protected?
  7. What is the maximum junction temperature of the STD12N65M2?

    The maximum junction temperature (TJ) is 150 °C.

  8. What are some common applications of the STD12N65M2?

    Common applications include power supplies, motor control, industrial automation, and consumer electronics requiring high power efficiency.

  9. Is the STD12N65M2 100% avalanche tested?
  10. What is the power dissipation capability of the STD12N65M2?

    The power dissipation (PD) is 85 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.90
81

Please send RFQ , we will respond immediately.

Similar Products

Part Number STD12N65M2 STD16N65M2 STD13N65M2 STD12N65M5 STD11N65M2 STD12N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 11A (Tc) 10A (Tc) 8.5A (Tc) 7A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V 360mOhm @ 5.5A, 10V 430mOhm @ 5A, 10V 430mOhm @ 4.3A, 10V 670mOhm @ 3.5A, 10V 450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V 19.5 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V 12.5 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 100 V 718 pF @ 100 V 590 pF @ 100 V 900 pF @ 100 V 410 pF @ 100 V 538 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 110W (Tc) 70W (Tc) 85W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8