STD12N65M2
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STMicroelectronics STD12N65M2

Manufacturer No:
STD12N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STD12N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. With its strip layout and improved vertical structure, the STD12N65M2 provides excellent electrical characteristics, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
ID (Drain Current) 8 A
RDS(on) (On-Resistance) 420 mΩ (typ.)
PD (Power Dissipation) 85 W
TJ (Junction Temperature) 150 °C
Package TO-252 (DPAK), Surface Mount

Key Features

  • Extremely low gate charge, enhancing switching performance.
  • Excellent output capacitance (COSS) profile, reducing switching losses.
  • 100% avalanche tested, ensuring robustness under high stress conditions.
  • Zener-protected gate, providing protection against voltage spikes.
  • MDmesh M2 technology for improved electrical characteristics and reliability.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high power efficiency.
  • Aerospace and defense applications where reliability is critical.

Q & A

  1. What is the maximum drain-source voltage of the STD12N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STD12N65M2?

    The typical on-resistance (RDS(on)) is 420 mΩ.

  3. What is the maximum drain current of the STD12N65M2?

    The maximum drain current (ID) is 8 A.

  4. What is the package type of the STD12N65M2?

    The package type is TO-252 (DPAK), surface mount.

  5. What technology is used in the STD12N65M2?

    The STD12N65M2 uses MDmesh M2 technology.

  6. Is the STD12N65M2 Zener-protected?
  7. What is the maximum junction temperature of the STD12N65M2?

    The maximum junction temperature (TJ) is 150 °C.

  8. What are some common applications of the STD12N65M2?

    Common applications include power supplies, motor control, industrial automation, and consumer electronics requiring high power efficiency.

  9. Is the STD12N65M2 100% avalanche tested?
  10. What is the power dissipation capability of the STD12N65M2?

    The power dissipation (PD) is 85 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD12N65M2 STD16N65M2 STD13N65M2 STD12N65M5 STD11N65M2 STD12N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 11A (Tc) 10A (Tc) 8.5A (Tc) 7A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V 360mOhm @ 5.5A, 10V 430mOhm @ 5A, 10V 430mOhm @ 4.3A, 10V 670mOhm @ 3.5A, 10V 450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V 19.5 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V 12.5 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 100 V 718 pF @ 100 V 590 pF @ 100 V 900 pF @ 100 V 410 pF @ 100 V 538 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 110W (Tc) 70W (Tc) 85W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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