STD16N65M5
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STMicroelectronics STD16N65M5

Manufacturer No:
STD16N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 12A DPAK
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The STD16N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency. The STD16N65M5 is packaged in a DPAK (TO-252) package and is available in various environmental compliance grades, including ECOPACK options.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 230 mΩ (typ.), 279 mΩ (max.)
ID (Drain Current, continuous at TC = 25 °C) 12 A A
ID (Drain Current, continuous at TC = 100 °C) 7.3 A A
IDM (Drain Current, pulsed) 48 A A
PTOT (Total Power Dissipation at TC = 25 °C) 90 W W
Tj (Operating Junction Temperature Range) -55 to 150 °C °C
Tstg (Storage Temperature Range) -55 to 150 °C °C
RthJC (Thermal Resistance, Junction-to-Case) 1.38 °C/W °C/W
RthJA (Thermal Resistance, Junction-to-Ambient) 50 °C/W °C/W

Key Features

  • Extremely low RDS(on) for high efficiency and power handling.
  • Low gate charge and input capacitance for excellent switching performance.
  • 100% avalanche tested to ensure robustness under high stress conditions.
  • High drain-source breakdown voltage (V(BR)DSS) of 650 V.
  • Wide operating junction temperature range from -55 to 150 °C.
  • Available in ECOPACK compliant packages for environmental sustainability.

Applications

The STD16N65M5 is particularly suited for various switching applications that demand high power and efficiency. These include:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • High-frequency switching circuits.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD16N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the STD16N65M5?

    The typical on-resistance (RDS(on)) is 230 mΩ.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 12 A.

  4. What is the thermal resistance from junction to case (RthJC) for the STD16N65M5?

    The thermal resistance from junction to case (RthJC) is 1.38 °C/W.

  5. What is the operating junction temperature range for the STD16N65M5?

    The operating junction temperature range is -55 to 150 °C.

  6. Is the STD16N65M5 100% avalanche tested?

    Yes, the STD16N65M5 is 100% avalanche tested.

  7. What package types are available for the STD16N65M5?

    The STD16N65M5 is available in DPAK (TO-252) packages, including type A2 and type C3.

  8. Does the STD16N65M5 come in environmentally compliant packages?

    Yes, the STD16N65M5 is available in ECOPACK compliant packages.

  9. What are some common applications for the STD16N65M5?

    Common applications include power supplies, DC-DC converters, motor control systems, industrial automation, and high-frequency switching circuits.

  10. How does the STD16N65M5 perform in terms of switching times?

    The STD16N65M5 has excellent switching performance with low gate charge and input capacitance, and specified switching times such as voltage delay time, voltage rise time, and current fall time.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:299mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STB16N65M5
STB16N65M5
MOSFET N-CH 650V 12A D2PAK

Similar Products

Part Number STD16N65M5 STD18N65M5 STD11N65M5 STD12N65M5 STD15N65M5 STD16N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 15A (Tc) 9A (Tc) 8.5A (Tc) 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 6A, 10V 220mOhm @ 7.5A, 10V 480mOhm @ 4.5A, 10V 430mOhm @ 4.3A, 10V 340mOhm @ 5.5A, 10V 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 31 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V 19.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 100 V 1240 pF @ 100 V 620 pF @ 100 V 900 pF @ 100 V 816 pF @ 100 V 718 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 90W (Tc) 110W (Tc) 85W (Tc) 70W (Tc) 85W (Tc) 110W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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