STF24N65M2
  • Share:

STMicroelectronics STF24N65M2

Manufacturer No:
STF24N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 16A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF24N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is available in the TO-220FP package and is designed to offer high efficiency and reliability in various power switching applications. The STF24N65M2 features a low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (Static Drain-Source On-Resistance) 0.23 Ω (max) Ω
ID (Drain Current, continuous at TC = 25 °C) 16 A A
ID (Drain Current, continuous at TC = 100 °C) 10 A A
IDM (Drain Current, pulsed) 64 A A
PTOT (Total Dissipation at TC = 25 °C) 30 W W
VGS (Gate-Source Voltage) ± 25 V V
V(BR)DSS (Drain-Source Breakdown Voltage) 650 V V
VGS(th) (Gate Threshold Voltage) 2 - 4 V V

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics

Applications

The STF24N65M2 is particularly suited for high-efficiency power switching applications, including:

  • Switching converters
  • Power supplies
  • Motor control
  • High-frequency applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF24N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the STF24N65M2?

    The typical on-resistance (RDS(on)) is 0.185 Ω, with a maximum value of 0.23 Ω.

  3. What is the continuous drain current (ID) at 25 °C and 100 °C?

    The continuous drain current (ID) is 16 A at 25 °C and 10 A at 100 °C.

  4. What is the maximum pulsed drain current (IDM) of the STF24N65M2?

    The maximum pulsed drain current (IDM) is 64 A.

  5. What are the package options available for the STF24N65M2?

    The STF24N65M2 is available in the TO-220FP package.

  6. What is the gate-source voltage (VGS) range for the STF24N65M2?

    The gate-source voltage (VGS) range is ± 25 V.

  7. Is the STF24N65M2 100% avalanche tested?
  8. What are some key applications for the STF24N65M2?

    The STF24N65M2 is suitable for switching converters, power supplies, motor control, and high-frequency applications.

  9. What technology is used in the development of the STF24N65M2?

    The STF24N65M2 is developed using the MDmesh™ M2 technology.

  10. What is the total dissipation at 25 °C for the TO-220FP package?

    The total dissipation at 25 °C for the TO-220FP package is 30 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$3.04
284

Please send RFQ , we will respond immediately.

Same Series
STB24N65M2
STB24N65M2
MOSFET N-CH 650V 16A D2PAK
STP24N65M2
STP24N65M2
MOSFET N-CH 650V 16A TO220

Similar Products

Part Number STF24N65M2 STF28N65M2 STF24N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 20A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 8A, 10V 180mOhm @ 10A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 35 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V 1440 pF @ 100 V 1060 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA