STF24N65M2
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STMicroelectronics STF24N65M2

Manufacturer No:
STF24N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 16A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF24N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is available in the TO-220FP package and is designed to offer high efficiency and reliability in various power switching applications. The STF24N65M2 features a low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (Static Drain-Source On-Resistance) 0.23 Ω (max) Ω
ID (Drain Current, continuous at TC = 25 °C) 16 A A
ID (Drain Current, continuous at TC = 100 °C) 10 A A
IDM (Drain Current, pulsed) 64 A A
PTOT (Total Dissipation at TC = 25 °C) 30 W W
VGS (Gate-Source Voltage) ± 25 V V
V(BR)DSS (Drain-Source Breakdown Voltage) 650 V V
VGS(th) (Gate Threshold Voltage) 2 - 4 V V

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics

Applications

The STF24N65M2 is particularly suited for high-efficiency power switching applications, including:

  • Switching converters
  • Power supplies
  • Motor control
  • High-frequency applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF24N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the STF24N65M2?

    The typical on-resistance (RDS(on)) is 0.185 Ω, with a maximum value of 0.23 Ω.

  3. What is the continuous drain current (ID) at 25 °C and 100 °C?

    The continuous drain current (ID) is 16 A at 25 °C and 10 A at 100 °C.

  4. What is the maximum pulsed drain current (IDM) of the STF24N65M2?

    The maximum pulsed drain current (IDM) is 64 A.

  5. What are the package options available for the STF24N65M2?

    The STF24N65M2 is available in the TO-220FP package.

  6. What is the gate-source voltage (VGS) range for the STF24N65M2?

    The gate-source voltage (VGS) range is ± 25 V.

  7. Is the STF24N65M2 100% avalanche tested?
  8. What are some key applications for the STF24N65M2?

    The STF24N65M2 is suitable for switching converters, power supplies, motor control, and high-frequency applications.

  9. What technology is used in the development of the STF24N65M2?

    The STF24N65M2 is developed using the MDmesh™ M2 technology.

  10. What is the total dissipation at 25 °C for the TO-220FP package?

    The total dissipation at 25 °C for the TO-220FP package is 30 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STB24N65M2
STB24N65M2
MOSFET N-CH 650V 16A D2PAK
STP24N65M2
STP24N65M2
MOSFET N-CH 650V 16A TO220

Similar Products

Part Number STF24N65M2 STF28N65M2 STF24N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 20A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 8A, 10V 180mOhm @ 10A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 35 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V 1440 pF @ 100 V 1060 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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