STF18N60M2
  • Share:

STMicroelectronics STF18N60M2

Manufacturer No:
STF18N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF18N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its switching characteristics and overall performance. It is packaged in a TO-220FP package, which is environmentally compliant and available in various ECOPACK grades.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.255 (typ.), 0.280 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 13 A
ID (Drain Current, continuous at TC = 100 °C) 8 A
IDM (Drain Current, pulsed) 52 A
PTOT (Total Power Dissipation at TC = 25 °C) 25 W
VGS (Gate-Source Voltage) ±25 V
Tj (Operating Junction Temperature Range) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 5 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • Extremely low gate charge (Qg = 21.5 nC typ.)
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected gate
  • Low on-resistance (RDS(on) = 0.255 Ω typ.)
  • Optimized switching characteristics
  • High efficiency in high-frequency applications

Applications

  • Switching applications
  • LCC (Load Commutated Chopper) converters
  • Resonant converters
  • High-efficiency power supplies
  • Motor control and drive systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF18N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical static drain-source on-resistance (RDS(on)) of the STF18N60M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.255 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 13 A.

  4. What is the total power dissipation (PTOT) at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 25 W.

  5. What is the operating junction temperature range (Tj) of the STF18N60M2?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. What are the key features of the STF18N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected gate.

  7. In what package is the STF18N60M2 available?

    The STF18N60M2 is available in a TO-220FP package.

  8. What are some common applications of the STF18N60M2?

    Common applications include switching applications, LCC converters, resonant converters, and high-efficiency power supplies.

  9. What is the thermal resistance junction-case (Rthj-case) of the STF18N60M2?

    The thermal resistance junction-case (Rthj-case) is 5 °C/W.

  10. Is the STF18N60M2 environmentally compliant?

    Yes, the STF18N60M2 is available in various ECOPACK grades, making it environmentally compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:791 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.56
29

Please send RFQ , we will respond immediately.

Similar Products

Part Number STF18N60M2 STF18N60M6 STF18N65M2 STF28N60M2 STF10N60M2 STF12N60M2 STF13N60M2 STF16N60M2 STF18N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 12A (Tc) 24A (Tc) 7.5A (Tc) 9A (Tc) 11A (Tc) 12A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 280mOhm @ 6.5A, 10V 330mOhm @ 6A, 10V 150mOhm @ 12A, 10V 600mOhm @ 4A, 10V 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V 16.8 nC @ 10 V 20 nC @ 10 V 37 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 791 pF @ 100 V 650 pF @ 100 V 770 pF @ 100 V 1370 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 700 pF @ 100 V 800 pF @ 100 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK