STF18N60M2
  • Share:

STMicroelectronics STF18N60M2

Manufacturer No:
STF18N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF18N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its switching characteristics and overall performance. It is packaged in a TO-220FP package, which is environmentally compliant and available in various ECOPACK grades.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.255 (typ.), 0.280 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 13 A
ID (Drain Current, continuous at TC = 100 °C) 8 A
IDM (Drain Current, pulsed) 52 A
PTOT (Total Power Dissipation at TC = 25 °C) 25 W
VGS (Gate-Source Voltage) ±25 V
Tj (Operating Junction Temperature Range) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 5 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • Extremely low gate charge (Qg = 21.5 nC typ.)
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected gate
  • Low on-resistance (RDS(on) = 0.255 Ω typ.)
  • Optimized switching characteristics
  • High efficiency in high-frequency applications

Applications

  • Switching applications
  • LCC (Load Commutated Chopper) converters
  • Resonant converters
  • High-efficiency power supplies
  • Motor control and drive systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF18N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical static drain-source on-resistance (RDS(on)) of the STF18N60M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.255 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 13 A.

  4. What is the total power dissipation (PTOT) at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 25 W.

  5. What is the operating junction temperature range (Tj) of the STF18N60M2?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. What are the key features of the STF18N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected gate.

  7. In what package is the STF18N60M2 available?

    The STF18N60M2 is available in a TO-220FP package.

  8. What are some common applications of the STF18N60M2?

    Common applications include switching applications, LCC converters, resonant converters, and high-efficiency power supplies.

  9. What is the thermal resistance junction-case (Rthj-case) of the STF18N60M2?

    The thermal resistance junction-case (Rthj-case) is 5 °C/W.

  10. Is the STF18N60M2 environmentally compliant?

    Yes, the STF18N60M2 is available in various ECOPACK grades, making it environmentally compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:791 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.56
29

Please send RFQ , we will respond immediately.

Similar Products

Part Number STF18N60M2 STF18N60M6 STF18N65M2 STF28N60M2 STF10N60M2 STF12N60M2 STF13N60M2 STF16N60M2 STF18N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 12A (Tc) 24A (Tc) 7.5A (Tc) 9A (Tc) 11A (Tc) 12A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 280mOhm @ 6.5A, 10V 330mOhm @ 6A, 10V 150mOhm @ 12A, 10V 600mOhm @ 4A, 10V 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V 16.8 nC @ 10 V 20 nC @ 10 V 37 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 791 pF @ 100 V 650 pF @ 100 V 770 pF @ 100 V 1370 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 700 pF @ 100 V 800 pF @ 100 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA