STF18N60M2
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STMicroelectronics STF18N60M2

Manufacturer No:
STF18N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The STF18N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its switching characteristics and overall performance. It is packaged in a TO-220FP package, which is environmentally compliant and available in various ECOPACK grades.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.255 (typ.), 0.280 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 13 A
ID (Drain Current, continuous at TC = 100 °C) 8 A
IDM (Drain Current, pulsed) 52 A
PTOT (Total Power Dissipation at TC = 25 °C) 25 W
VGS (Gate-Source Voltage) ±25 V
Tj (Operating Junction Temperature Range) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 5 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • Extremely low gate charge (Qg = 21.5 nC typ.)
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected gate
  • Low on-resistance (RDS(on) = 0.255 Ω typ.)
  • Optimized switching characteristics
  • High efficiency in high-frequency applications

Applications

  • Switching applications
  • LCC (Load Commutated Chopper) converters
  • Resonant converters
  • High-efficiency power supplies
  • Motor control and drive systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF18N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical static drain-source on-resistance (RDS(on)) of the STF18N60M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.255 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 13 A.

  4. What is the total power dissipation (PTOT) at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 25 W.

  5. What is the operating junction temperature range (Tj) of the STF18N60M2?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. What are the key features of the STF18N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected gate.

  7. In what package is the STF18N60M2 available?

    The STF18N60M2 is available in a TO-220FP package.

  8. What are some common applications of the STF18N60M2?

    Common applications include switching applications, LCC converters, resonant converters, and high-efficiency power supplies.

  9. What is the thermal resistance junction-case (Rthj-case) of the STF18N60M2?

    The thermal resistance junction-case (Rthj-case) is 5 °C/W.

  10. Is the STF18N60M2 environmentally compliant?

    Yes, the STF18N60M2 is available in various ECOPACK grades, making it environmentally compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:791 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 12A (Tc) 24A (Tc) 7.5A (Tc) 9A (Tc) 11A (Tc) 12A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 280mOhm @ 6.5A, 10V 330mOhm @ 6A, 10V 150mOhm @ 12A, 10V 600mOhm @ 4A, 10V 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V 16.8 nC @ 10 V 20 nC @ 10 V 37 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 791 pF @ 100 V 650 pF @ 100 V 770 pF @ 100 V 1370 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 700 pF @ 100 V 800 pF @ 100 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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