STF18N60M2
  • Share:

STMicroelectronics STF18N60M2

Manufacturer No:
STF18N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF18N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its switching characteristics and overall performance. It is packaged in a TO-220FP package, which is environmentally compliant and available in various ECOPACK grades.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.255 (typ.), 0.280 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 13 A
ID (Drain Current, continuous at TC = 100 °C) 8 A
IDM (Drain Current, pulsed) 52 A
PTOT (Total Power Dissipation at TC = 25 °C) 25 W
VGS (Gate-Source Voltage) ±25 V
Tj (Operating Junction Temperature Range) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 5 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • Extremely low gate charge (Qg = 21.5 nC typ.)
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected gate
  • Low on-resistance (RDS(on) = 0.255 Ω typ.)
  • Optimized switching characteristics
  • High efficiency in high-frequency applications

Applications

  • Switching applications
  • LCC (Load Commutated Chopper) converters
  • Resonant converters
  • High-efficiency power supplies
  • Motor control and drive systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF18N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical static drain-source on-resistance (RDS(on)) of the STF18N60M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.255 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 13 A.

  4. What is the total power dissipation (PTOT) at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 25 W.

  5. What is the operating junction temperature range (Tj) of the STF18N60M2?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. What are the key features of the STF18N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected gate.

  7. In what package is the STF18N60M2 available?

    The STF18N60M2 is available in a TO-220FP package.

  8. What are some common applications of the STF18N60M2?

    Common applications include switching applications, LCC converters, resonant converters, and high-efficiency power supplies.

  9. What is the thermal resistance junction-case (Rthj-case) of the STF18N60M2?

    The thermal resistance junction-case (Rthj-case) is 5 °C/W.

  10. Is the STF18N60M2 environmentally compliant?

    Yes, the STF18N60M2 is available in various ECOPACK grades, making it environmentally compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:791 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.56
29

Please send RFQ , we will respond immediately.

Similar Products

Part Number STF18N60M2 STF18N60M6 STF18N65M2 STF28N60M2 STF10N60M2 STF12N60M2 STF13N60M2 STF16N60M2 STF18N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 12A (Tc) 24A (Tc) 7.5A (Tc) 9A (Tc) 11A (Tc) 12A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 280mOhm @ 6.5A, 10V 330mOhm @ 6A, 10V 150mOhm @ 12A, 10V 600mOhm @ 4A, 10V 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V 16.8 nC @ 10 V 20 nC @ 10 V 37 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 791 pF @ 100 V 650 pF @ 100 V 770 pF @ 100 V 1370 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 700 pF @ 100 V 800 pF @ 100 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN