STF12N60M2
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STMicroelectronics STF12N60M2

Manufacturer No:
STF12N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 9A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF12N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. The MDmesh M2 technology enhances the device's electrical characteristics through an improved vertical structure and strip layout, making it suitable for high-voltage and high-current applications.

Key Specifications

ParameterValue
Channel TypeN Channel
Drain-Source Voltage (Vds)600 V
Drain Current (Id)9 A
On-State Resistance (Rds(on))0.395 Ohm (typ.)
Package TypeTO-220FP, Through Hole
Operating Junction Temperature-40°C to 150°C
Power Dissipation (Pd)25 W

Key Features

  • MDmesh M2 technology for improved electrical characteristics
  • High drain-source voltage (Vds) of 600 V
  • High drain current (Id) of 9 A
  • Low on-state resistance (Rds(on)) of 0.395 Ohm (typ.)
  • Wide operating junction temperature range from -40°C to 150°C
  • High power dissipation capability of 25 W
  • Available in TO-220FP package for through-hole mounting

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Switch-mode power supplies
  • High-voltage and high-current applications
  • Aerospace and industrial power systems

Q & A

  1. What is the maximum drain-source voltage of the STF12N60M2?
    The maximum drain-source voltage (Vds) is 600 V.
  2. What is the typical on-state resistance (Rds(on)) of the STF12N60M2?
    The typical on-state resistance (Rds(on)) is 0.395 Ohm.
  3. What is the maximum drain current (Id) of the STF12N60M2?
    The maximum drain current (Id) is 9 A.
  4. In which package is the STF12N60M2 available?
    The STF12N60M2 is available in the TO-220FP package.
  5. What is the operating junction temperature range of the STF12N60M2?
    The operating junction temperature range is from -40°C to 150°C.
  6. What technology is used in the STF12N60M2?
    The STF12N60M2 uses MDmesh M2 technology.
  7. What is the power dissipation capability of the STF12N60M2?
    The power dissipation capability is 25 W.
  8. In which applications is the STF12N60M2 commonly used?
    The STF12N60M2 is commonly used in power supplies, DC-DC converters, motor control, switch-mode power supplies, and other high-voltage and high-current applications.
  9. Is the STF12N60M2 suitable for automotive applications?
    While it is not specifically marked as automotive-grade, it can be used in various industrial and power systems, but for automotive applications, specific automotive-grade versions should be considered.
  10. Where can I find detailed technical specifications for the STF12N60M2?
    Detailed technical specifications can be found in the datasheet available on the STMicroelectronics website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:538 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF12N60M2 STF13N60M2 STF18N60M2 STF16N60M2 STF12N65M2 STF10N60M2 STF12N50M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 11A (Tc) 13A (Tc) 12A (Tc) 8A (Tc) 7.5A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V 320mOhm @ 6A, 10V 500mOhm @ 4A, 10V 600mOhm @ 4A, 10V 380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 17 nC @ 10 V 21.5 nC @ 10 V 19 nC @ 10 V 16.5 nC @ 10 V 13.5 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 538 pF @ 100 V 580 pF @ 100 V 791 pF @ 100 V 700 pF @ 100 V 535 pF @ 100 V 400 pF @ 100 V 560 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 85W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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