STF12N60M2
  • Share:

STMicroelectronics STF12N60M2

Manufacturer No:
STF12N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 9A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF12N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. The MDmesh M2 technology enhances the device's electrical characteristics through an improved vertical structure and strip layout, making it suitable for high-voltage and high-current applications.

Key Specifications

ParameterValue
Channel TypeN Channel
Drain-Source Voltage (Vds)600 V
Drain Current (Id)9 A
On-State Resistance (Rds(on))0.395 Ohm (typ.)
Package TypeTO-220FP, Through Hole
Operating Junction Temperature-40°C to 150°C
Power Dissipation (Pd)25 W

Key Features

  • MDmesh M2 technology for improved electrical characteristics
  • High drain-source voltage (Vds) of 600 V
  • High drain current (Id) of 9 A
  • Low on-state resistance (Rds(on)) of 0.395 Ohm (typ.)
  • Wide operating junction temperature range from -40°C to 150°C
  • High power dissipation capability of 25 W
  • Available in TO-220FP package for through-hole mounting

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Switch-mode power supplies
  • High-voltage and high-current applications
  • Aerospace and industrial power systems

Q & A

  1. What is the maximum drain-source voltage of the STF12N60M2?
    The maximum drain-source voltage (Vds) is 600 V.
  2. What is the typical on-state resistance (Rds(on)) of the STF12N60M2?
    The typical on-state resistance (Rds(on)) is 0.395 Ohm.
  3. What is the maximum drain current (Id) of the STF12N60M2?
    The maximum drain current (Id) is 9 A.
  4. In which package is the STF12N60M2 available?
    The STF12N60M2 is available in the TO-220FP package.
  5. What is the operating junction temperature range of the STF12N60M2?
    The operating junction temperature range is from -40°C to 150°C.
  6. What technology is used in the STF12N60M2?
    The STF12N60M2 uses MDmesh M2 technology.
  7. What is the power dissipation capability of the STF12N60M2?
    The power dissipation capability is 25 W.
  8. In which applications is the STF12N60M2 commonly used?
    The STF12N60M2 is commonly used in power supplies, DC-DC converters, motor control, switch-mode power supplies, and other high-voltage and high-current applications.
  9. Is the STF12N60M2 suitable for automotive applications?
    While it is not specifically marked as automotive-grade, it can be used in various industrial and power systems, but for automotive applications, specific automotive-grade versions should be considered.
  10. Where can I find detailed technical specifications for the STF12N60M2?
    Detailed technical specifications can be found in the datasheet available on the STMicroelectronics website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:538 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

-
253

Please send RFQ , we will respond immediately.

Similar Products

Part Number STF12N60M2 STF13N60M2 STF18N60M2 STF16N60M2 STF12N65M2 STF10N60M2 STF12N50M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 11A (Tc) 13A (Tc) 12A (Tc) 8A (Tc) 7.5A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V 320mOhm @ 6A, 10V 500mOhm @ 4A, 10V 600mOhm @ 4A, 10V 380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 17 nC @ 10 V 21.5 nC @ 10 V 19 nC @ 10 V 16.5 nC @ 10 V 13.5 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 538 pF @ 100 V 580 pF @ 100 V 791 pF @ 100 V 700 pF @ 100 V 535 pF @ 100 V 400 pF @ 100 V 560 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 85W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC