Overview
The STF10N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its strip layout and improved vertical structure, which enhance its performance and reliability. It is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications.
Key Specifications
Parameter | Value |
---|---|
VDS (Drain-Source Voltage) | 600 V |
RDS(on) (On-Resistance) | 0.55 Ω (typ.) |
ID (Drain Current) | 7.5 A |
Package | TO-220FP |
Qg (Total Gate Charge) | Low Qg |
Avalanche Capability | 100% avalanche tested |
Key Features
- MDmesh M2 technology for improved performance and reliability
- Low on-resistance (RDS(on)) of 0.55 Ω (typ.)
- High drain-source voltage (VDS) of 600 V
- High drain current (ID) of 7.5 A
- Low total gate charge (Qg)
- 100% avalanche tested for robustness
- Zener-protected gate for enhanced protection
- Excellent output capacitance characteristics
Applications
The STF10N60M2 is designed for various high-power switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drives
- Industrial power systems
- Automotive systems
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage of the STF10N60M2?
The maximum drain-source voltage (VDS) is 600 V. - What is the typical on-resistance of the STF10N60M2?
The typical on-resistance (RDS(on)) is 0.55 Ω. - What is the maximum drain current of the STF10N60M2?
The maximum drain current (ID) is 7.5 A. - What package type is the STF10N60M2 available in?
The STF10N60M2 is available in the TO-220FP package. - Is the STF10N60M2 avalanche tested?
Yes, the STF10N60M2 is 100% avalanche tested. - What technology is used in the STF10N60M2?
The STF10N60M2 uses MDmesh M2 technology. - What are some key features of the STF10N60M2?
Key features include low on-resistance, high drain-source voltage, high drain current, low total gate charge, and Zener-protected gate. - What are some common applications for the STF10N60M2?
Common applications include power supplies, motor control, industrial power systems, automotive systems, and high-frequency switching circuits. - Is the STF10N60M2 suitable for high-frequency switching?
Yes, the STF10N60M2 is suitable for high-frequency switching applications due to its low total gate charge and excellent output capacitance characteristics. - Where can I find detailed specifications for the STF10N60M2?
Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and TME.