STF10N60M2
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STMicroelectronics STF10N60M2

Manufacturer No:
STF10N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7.5A TO220FP
Delivery:
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Product Introduction

Overview

The STF10N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its strip layout and improved vertical structure, which enhance its performance and reliability. It is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)0.55 Ω (typ.)
ID (Drain Current)7.5 A
PackageTO-220FP
Qg (Total Gate Charge)Low Qg
Avalanche Capability100% avalanche tested

Key Features

  • MDmesh M2 technology for improved performance and reliability
  • Low on-resistance (RDS(on)) of 0.55 Ω (typ.)
  • High drain-source voltage (VDS) of 600 V
  • High drain current (ID) of 7.5 A
  • Low total gate charge (Qg)
  • 100% avalanche tested for robustness
  • Zener-protected gate for enhanced protection
  • Excellent output capacitance characteristics

Applications

The STF10N60M2 is designed for various high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial power systems
  • Automotive systems
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage of the STF10N60M2?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STF10N60M2?
    The typical on-resistance (RDS(on)) is 0.55 Ω.
  3. What is the maximum drain current of the STF10N60M2?
    The maximum drain current (ID) is 7.5 A.
  4. What package type is the STF10N60M2 available in?
    The STF10N60M2 is available in the TO-220FP package.
  5. Is the STF10N60M2 avalanche tested?
    Yes, the STF10N60M2 is 100% avalanche tested.
  6. What technology is used in the STF10N60M2?
    The STF10N60M2 uses MDmesh M2 technology.
  7. What are some key features of the STF10N60M2?
    Key features include low on-resistance, high drain-source voltage, high drain current, low total gate charge, and Zener-protected gate.
  8. What are some common applications for the STF10N60M2?
    Common applications include power supplies, motor control, industrial power systems, automotive systems, and high-frequency switching circuits.
  9. Is the STF10N60M2 suitable for high-frequency switching?
    Yes, the STF10N60M2 is suitable for high-frequency switching applications due to its low total gate charge and excellent output capacitance characteristics.
  10. Where can I find detailed specifications for the STF10N60M2?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF10N60M2 STF13N60M2 STF18N60M2 STF16N60M2 STF12N60M2 STF10N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 11A (Tc) 13A (Tc) 12A (Tc) 9A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4A, 10V 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V 320mOhm @ 6A, 10V 450mOhm @ 4.5A, 10V 530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 17 nC @ 10 V 21.5 nC @ 10 V 19 nC @ 10 V 16 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V 580 pF @ 100 V 791 pF @ 100 V 700 pF @ 100 V 538 pF @ 100 V 529 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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