STF18N60DM2
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STMicroelectronics STF18N60DM2

Manufacturer No:
STF18N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF18N60DM2 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of ST's MDmesh DM2 technology, which features an enhanced trench gate structure. The STF18N60DM2 is designed to offer high efficiency and reliability in various power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Drain-Source On-Resistance) 0.260 Ω
ID (Continuous Drain Current) 12 A
Ptot (Total Power Dissipation) - -
TJ (Junction Temperature) -150 to 150 °C
Package TO-220FP, DPAK, etc. -

Key Features

  • MDmesh DM2 Technology: Enhanced trench gate structure for improved performance and efficiency.
  • High Voltage Rating: 600 V drain-source voltage, making it suitable for high-voltage applications.
  • Low On-Resistance: 0.260 Ω typical drain-source on-resistance for reduced power losses.
  • High Current Capability: Continuous drain current of 12 A.
  • Zener Protection: 100% avalanche tested and Zener-protected for enhanced reliability.
  • Thermal Performance: Designed to handle high junction temperatures, ensuring reliable operation in demanding environments.

Applications

  • Flyback Converters: Ideal for use in flyback converters due to its high voltage and current handling capabilities.
  • LED Lighting: Suitable for LED lighting applications requiring high efficiency and reliability.
  • Power Supplies: Used in various power supply designs where high performance and low power losses are critical.
  • Motor Control: Can be used in motor control applications requiring high current and voltage handling.

Q & A

  1. What is the maximum drain-source voltage of the STF18N60DM2?

    The maximum drain-source voltage is 600 V.

  2. What is the typical on-resistance of the STF18N60DM2?

    The typical on-resistance is 0.260 Ω.

  3. What is the continuous drain current rating of the STF18N60DM2?

    The continuous drain current rating is 12 A.

  4. Is the STF18N60DM2 Zener-protected?

    Yes, the STF18N60DM2 is 100% avalanche tested and Zener-protected.

  5. What are the typical applications of the STF18N60DM2?

    Typical applications include flyback converters, LED lighting, power supplies, and motor control.

  6. What technology does the STF18N60DM2 use?

    The STF18N60DM2 uses ST's MDmesh DM2 technology.

  7. What is the junction temperature range of the STF18N60DM2?

    The junction temperature range is -150 to 150 °C.

  8. What packages are available for the STF18N60DM2?

    The device is available in packages such as TO-220FP and DPAK.

  9. Why is the STF18N60DM2 suitable for high-voltage applications?

    It is suitable due to its high voltage rating and low on-resistance, which reduce power losses and improve efficiency.

  10. How does the STF18N60DM2 enhance reliability in power management applications?

    It enhances reliability through its Zener protection, 100% avalanche testing, and robust thermal performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF18N60DM2 STF18N60M2 STF28N60DM2 STF10N60DM2 STF11N60DM2 STF13N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 21A (Tc) 8A (Tc) 10A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 295mOhm @ 6A, 10V 280mOhm @ 6.5A, 10V 160mOhm @ 10.5A, 10V 530mOhm @ 4A, 10V 420mOhm @ 5A, 10V 365mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 21.5 nC @ 10 V 34 nC @ 10 V 15 nC @ 10 V 16.5 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 100 V 791 pF @ 100 V 1500 pF @ 100 V 529 pF @ 100 V 614 pF @ 100 V 730 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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