Overview
The STF13N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast-recovery diode series. This device is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-efficiency applications. The MOSFET features a robust design and advanced technology to ensure reliable performance in various power management and control systems.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 600 V |
| RDS(on) (On-State Resistance) | 0.365 Ω (max) |
| ID (Drain Current) | 11 A |
| Fast-Recovery Body Diode | Yes |
| Gate Threshold Voltage (VGS(th)) | Typically 3 V to 4 V |
| Package | TO-220FP, DPAK, etc. |
Key Features
- High-voltage operation up to 600 V
- Low on-state resistance (RDS(on)) of 0.365 Ω (max)
- High drain current (ID) of 11 A
- Fast-recovery body diode with low recovery charge (Qrr) and time (trr)
- Extremely low gate charge for reduced switching losses
- Robust and reliable design suitable for high-efficiency applications
Applications
- Power supplies and DC-DC converters
- Motor control and drives
- Industrial and commercial power systems
- Aerospace and defense applications
- Automotive systems (where applicable)
Q & A
- What is the maximum drain-source voltage of the STF13N60DM2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-state resistance of the STF13N60DM2?
The typical on-state resistance (RDS(on)) is 0.365 Ω.
- What is the maximum drain current of the STF13N60DM2?
The maximum drain current (ID) is 11 A.
- Does the STF13N60DM2 have a fast-recovery body diode?
Yes, it features a fast-recovery body diode.
- What are the typical gate threshold voltage ranges for the STF13N60DM2?
The gate threshold voltage (VGS(th)) typically ranges from 3 V to 4 V.
- In which packages is the STF13N60DM2 available?
The STF13N60DM2 is available in packages such as TO-220FP and DPAK.
- What are some common applications for the STF13N60DM2?
Common applications include power supplies, DC-DC converters, motor control, and industrial power systems.
- Why is the STF13N60DM2 suitable for high-efficiency applications?
It is suitable due to its low on-state resistance, fast-recovery body diode, and extremely low gate charge, which reduce switching losses.
- Is the STF13N60DM2 used in automotive applications?
While it is primarily designed for general-purpose use, some variants within the MDmesh DM2 series may be suitable for automotive applications, but specific automotive-grade versions should be consulted.
- What are the benefits of using the MDmesh DM2 technology in the STF13N60DM2?
The MDmesh DM2 technology offers very low recovery charge and time, enhancing the overall efficiency and performance of the MOSFET.
