STD4N90K5
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STMicroelectronics STD4N90K5

Manufacturer No:
STD4N90K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD4N90K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its proprietary vertical structure, which enhances performance and efficiency. The STD4N90K5 is packaged in a DPAK (TO-252) package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 900 V
RDS(on) (On-Resistance) 1.90 Ω
ID (Drain Current) 3 A
Ptot (Total Power Dissipation) - -
TJ (Junction Temperature) -150 to 150 °C
Package DPAK (TO-252) -

Key Features

  • High voltage rating of 900 V, making it suitable for high-power applications.
  • Low on-resistance (RDS(on)) of 1.90 Ω, which minimizes power losses.
  • High drain current (ID) of 3 A, supporting robust current handling.
  • MDmesh™ K5 technology for enhanced performance and reliability.
  • DPAK (TO-252) package for efficient heat dissipation and compact design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial and consumer electronics requiring high voltage and current handling.
  • Aerospace and defense applications where high reliability is crucial.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STD4N90K5?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the typical on-resistance (RDS(on)) of the STD4N90K5?

    The typical on-resistance is 1.90 Ω.

  3. What is the maximum drain current (ID) of the STD4N90K5?

    The maximum drain current is 3 A.

  4. What package type is the STD4N90K5 available in?

    The STD4N90K5 is available in a DPAK (TO-252) package.

  5. What technology is used in the STD4N90K5?

    The STD4N90K5 uses MDmesh™ K5 technology.

  6. What are some common applications for the STD4N90K5?

    Common applications include power supplies, motor control systems, industrial electronics, and renewable energy systems.

  7. What is the junction temperature range for the STD4N90K5?

    The junction temperature range is -150 to 150 °C.

  8. Is the STD4N90K5 suitable for high-power applications?

    Yes, the STD4N90K5 is designed for high-power applications due to its high voltage and current ratings.

  9. Where can I find detailed specifications for the STD4N90K5?

    Detailed specifications can be found on the STMicroelectronics official website or through datasheets available on websites like Digi-Key, Mouser, etc.

  10. What are the benefits of using MDmesh™ K5 technology in the STD4N90K5?

    MDmesh™ K5 technology provides enhanced performance, lower on-resistance, and higher reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:173 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD4N90K5 STD6N90K5 STD7N90K5 STD4N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 6A (Tc) 7A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.1Ohm @ 1A, 10V 1.1Ohm @ 3A, 10V - 2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 10 V - - 10.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 173 pF @ 100 V - - 175 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 60W (Tc) 110W (Tc) 110W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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