STD7N80K5
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STMicroelectronics STD7N80K5

Manufacturer No:
STD7N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 6A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD7N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure, which results in a dramatic reduction in on-resistance and ultra-low gate charge. These characteristics make the STD7N80K5 ideal for applications requiring superior power density and high efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (Static Drain-Source On-Resistance) 1.2 Ω
ID (Drain Current, Continuous at TC = 25 °C) 3.6 A
ID (Drain Current, Continuous at TC = 100 °C) 2.3 A
IDM (Drain Current, Pulsed) 14 A
PTOT (Total Dissipation at TC = 25 °C) 42 W
Tj (Operating Junction Temperature Range) -55 to 150 °C
Tstg (Storage Temperature Range) -55 to 150 °C
VGS (Gate-Source Voltage) ±30 V
Rthj-case (Thermal Resistance Junction-Case) 3 °C/W
Rthj-pcb (Thermal Resistance Junction-pcb) 59 °C/W

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD performance

Applications

The STD7N80K5 is suitable for various switching applications that require high power density and efficiency. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD7N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance (RDS(on)) of the STD7N80K5?

    The typical on-resistance (RDS(on)) is 1.2 Ω.

  3. What is the continuous drain current (ID) at 25 °C for the STD7N80K5?

    The continuous drain current (ID) at 25 °C is 3.6 A.

  4. What is the operating junction temperature range for the STD7N80K5?

    The operating junction temperature range is -55 to 150 °C.

  5. Is the STD7N80K5 protected against avalanche conditions?

    Yes, the STD7N80K5 is 100% avalanche tested.

  6. What is the gate-source voltage (VGS) rating for the STD7N80K5?

    The gate-source voltage (VGS) rating is ±30 V.

  7. What package type is the STD7N80K5 available in?

    The STD7N80K5 is available in the PowerFLAT™ 5x6 VHV package.

  8. Does the STD7N80K5 have built-in Zener diodes for ESD protection?

    Yes, the STD7N80K5 has built-in back-to-back Zener diodes for enhanced ESD performance.

  9. What are the thermal resistance values for the STD7N80K5?

    The thermal resistance junction-case (Rthj-case) is 3 °C/W, and the thermal resistance junction-pcb (Rthj-pcb) is 59 °C/W.

  10. What are some typical applications for the STD7N80K5?

    The STD7N80K5 is typically used in power supplies, motor control, industrial automation, and high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD7N80K5 STD8N80K5 STD7N90K5 STD9N80K5 STD4N80K5 STD5N80K5 STD6N80K5 STD7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 7A (Tc) 7A (Tc) 3A (Tc) 4A (Tc) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V - 900mOhm @ 3.5A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 16.5 nC @ 10 V - 12 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 7.5 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 450 pF @ 100 V - 340 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 255 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 110W (Tc) 60W (Tc) 60W (Tc) 85W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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