STD7N80K5
  • Share:

STMicroelectronics STD7N80K5

Manufacturer No:
STD7N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure, which results in a dramatic reduction in on-resistance and ultra-low gate charge. These characteristics make the STD7N80K5 ideal for applications requiring superior power density and high efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (Static Drain-Source On-Resistance) 1.2 Ω
ID (Drain Current, Continuous at TC = 25 °C) 3.6 A
ID (Drain Current, Continuous at TC = 100 °C) 2.3 A
IDM (Drain Current, Pulsed) 14 A
PTOT (Total Dissipation at TC = 25 °C) 42 W
Tj (Operating Junction Temperature Range) -55 to 150 °C
Tstg (Storage Temperature Range) -55 to 150 °C
VGS (Gate-Source Voltage) ±30 V
Rthj-case (Thermal Resistance Junction-Case) 3 °C/W
Rthj-pcb (Thermal Resistance Junction-pcb) 59 °C/W

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD performance

Applications

The STD7N80K5 is suitable for various switching applications that require high power density and efficiency. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD7N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance (RDS(on)) of the STD7N80K5?

    The typical on-resistance (RDS(on)) is 1.2 Ω.

  3. What is the continuous drain current (ID) at 25 °C for the STD7N80K5?

    The continuous drain current (ID) at 25 °C is 3.6 A.

  4. What is the operating junction temperature range for the STD7N80K5?

    The operating junction temperature range is -55 to 150 °C.

  5. Is the STD7N80K5 protected against avalanche conditions?

    Yes, the STD7N80K5 is 100% avalanche tested.

  6. What is the gate-source voltage (VGS) rating for the STD7N80K5?

    The gate-source voltage (VGS) rating is ±30 V.

  7. What package type is the STD7N80K5 available in?

    The STD7N80K5 is available in the PowerFLAT™ 5x6 VHV package.

  8. Does the STD7N80K5 have built-in Zener diodes for ESD protection?

    Yes, the STD7N80K5 has built-in back-to-back Zener diodes for enhanced ESD performance.

  9. What are the thermal resistance values for the STD7N80K5?

    The thermal resistance junction-case (Rthj-case) is 3 °C/W, and the thermal resistance junction-pcb (Rthj-pcb) is 59 °C/W.

  10. What are some typical applications for the STD7N80K5?

    The STD7N80K5 is typically used in power supplies, motor control, industrial automation, and high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.68
9

Please send RFQ , we will respond immediately.

Same Series
STU7N80K5
STU7N80K5
MOSFET N-CH 800V 6A IPAK
STP7N80K5
STP7N80K5
MOSFET N-CH 800V 6A TO220

Similar Products

Part Number STD7N80K5 STD8N80K5 STD7N90K5 STD9N80K5 STD4N80K5 STD5N80K5 STD6N80K5 STD7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 7A (Tc) 7A (Tc) 3A (Tc) 4A (Tc) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V - 900mOhm @ 3.5A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 16.5 nC @ 10 V - 12 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 7.5 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 450 pF @ 100 V - 340 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 255 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 110W (Tc) 60W (Tc) 60W (Tc) 85W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW