STD7N80K5
  • Share:

STMicroelectronics STD7N80K5

Manufacturer No:
STD7N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure, which results in a dramatic reduction in on-resistance and ultra-low gate charge. These characteristics make the STD7N80K5 ideal for applications requiring superior power density and high efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (Static Drain-Source On-Resistance) 1.2 Ω
ID (Drain Current, Continuous at TC = 25 °C) 3.6 A
ID (Drain Current, Continuous at TC = 100 °C) 2.3 A
IDM (Drain Current, Pulsed) 14 A
PTOT (Total Dissipation at TC = 25 °C) 42 W
Tj (Operating Junction Temperature Range) -55 to 150 °C
Tstg (Storage Temperature Range) -55 to 150 °C
VGS (Gate-Source Voltage) ±30 V
Rthj-case (Thermal Resistance Junction-Case) 3 °C/W
Rthj-pcb (Thermal Resistance Junction-pcb) 59 °C/W

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD performance

Applications

The STD7N80K5 is suitable for various switching applications that require high power density and efficiency. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD7N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance (RDS(on)) of the STD7N80K5?

    The typical on-resistance (RDS(on)) is 1.2 Ω.

  3. What is the continuous drain current (ID) at 25 °C for the STD7N80K5?

    The continuous drain current (ID) at 25 °C is 3.6 A.

  4. What is the operating junction temperature range for the STD7N80K5?

    The operating junction temperature range is -55 to 150 °C.

  5. Is the STD7N80K5 protected against avalanche conditions?

    Yes, the STD7N80K5 is 100% avalanche tested.

  6. What is the gate-source voltage (VGS) rating for the STD7N80K5?

    The gate-source voltage (VGS) rating is ±30 V.

  7. What package type is the STD7N80K5 available in?

    The STD7N80K5 is available in the PowerFLAT™ 5x6 VHV package.

  8. Does the STD7N80K5 have built-in Zener diodes for ESD protection?

    Yes, the STD7N80K5 has built-in back-to-back Zener diodes for enhanced ESD performance.

  9. What are the thermal resistance values for the STD7N80K5?

    The thermal resistance junction-case (Rthj-case) is 3 °C/W, and the thermal resistance junction-pcb (Rthj-pcb) is 59 °C/W.

  10. What are some typical applications for the STD7N80K5?

    The STD7N80K5 is typically used in power supplies, motor control, industrial automation, and high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.68
9

Please send RFQ , we will respond immediately.

Same Series
STU7N80K5
STU7N80K5
MOSFET N-CH 800V 6A IPAK
STP7N80K5
STP7N80K5
MOSFET N-CH 800V 6A TO220

Similar Products

Part Number STD7N80K5 STD8N80K5 STD7N90K5 STD9N80K5 STD4N80K5 STD5N80K5 STD6N80K5 STD7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 7A (Tc) 7A (Tc) 3A (Tc) 4A (Tc) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V - 900mOhm @ 3.5A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 16.5 nC @ 10 V - 12 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 7.5 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 450 pF @ 100 V - 340 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 255 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 110W (Tc) 60W (Tc) 60W (Tc) 85W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36