STD7N80K5
  • Share:

STMicroelectronics STD7N80K5

Manufacturer No:
STD7N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure, which results in a dramatic reduction in on-resistance and ultra-low gate charge. These characteristics make the STD7N80K5 ideal for applications requiring superior power density and high efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (Static Drain-Source On-Resistance) 1.2 Ω
ID (Drain Current, Continuous at TC = 25 °C) 3.6 A
ID (Drain Current, Continuous at TC = 100 °C) 2.3 A
IDM (Drain Current, Pulsed) 14 A
PTOT (Total Dissipation at TC = 25 °C) 42 W
Tj (Operating Junction Temperature Range) -55 to 150 °C
Tstg (Storage Temperature Range) -55 to 150 °C
VGS (Gate-Source Voltage) ±30 V
Rthj-case (Thermal Resistance Junction-Case) 3 °C/W
Rthj-pcb (Thermal Resistance Junction-pcb) 59 °C/W

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD performance

Applications

The STD7N80K5 is suitable for various switching applications that require high power density and efficiency. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD7N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance (RDS(on)) of the STD7N80K5?

    The typical on-resistance (RDS(on)) is 1.2 Ω.

  3. What is the continuous drain current (ID) at 25 °C for the STD7N80K5?

    The continuous drain current (ID) at 25 °C is 3.6 A.

  4. What is the operating junction temperature range for the STD7N80K5?

    The operating junction temperature range is -55 to 150 °C.

  5. Is the STD7N80K5 protected against avalanche conditions?

    Yes, the STD7N80K5 is 100% avalanche tested.

  6. What is the gate-source voltage (VGS) rating for the STD7N80K5?

    The gate-source voltage (VGS) rating is ±30 V.

  7. What package type is the STD7N80K5 available in?

    The STD7N80K5 is available in the PowerFLAT™ 5x6 VHV package.

  8. Does the STD7N80K5 have built-in Zener diodes for ESD protection?

    Yes, the STD7N80K5 has built-in back-to-back Zener diodes for enhanced ESD performance.

  9. What are the thermal resistance values for the STD7N80K5?

    The thermal resistance junction-case (Rthj-case) is 3 °C/W, and the thermal resistance junction-pcb (Rthj-pcb) is 59 °C/W.

  10. What are some typical applications for the STD7N80K5?

    The STD7N80K5 is typically used in power supplies, motor control, industrial automation, and high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.68
9

Please send RFQ , we will respond immediately.

Same Series
STU7N80K5
STU7N80K5
MOSFET N-CH 800V 6A IPAK
STP7N80K5
STP7N80K5
MOSFET N-CH 800V 6A TO220

Similar Products

Part Number STD7N80K5 STD8N80K5 STD7N90K5 STD9N80K5 STD4N80K5 STD5N80K5 STD6N80K5 STD7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 7A (Tc) 7A (Tc) 3A (Tc) 4A (Tc) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V - 900mOhm @ 3.5A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 16.5 nC @ 10 V - 12 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 7.5 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 450 pF @ 100 V - 340 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 255 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 110W (Tc) 60W (Tc) 60W (Tc) 85W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT