STD8N80K5
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STMicroelectronics STD8N80K5

Manufacturer No:
STD8N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 800V 6A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD8N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure, enhancing the device's performance and efficiency. The MOSFET is packaged in a TO-252 (DPAK) surface mount package, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
Current Rating (Id)6 A (Tc)
Power Dissipation (Pd)110 W (Tc)
Package TypeTO-252 (DPAK)
Rds(on) (Typical)0.85 Ω
Gate Threshold Voltage (Vgs(th))3 V to 4 V

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.85 Ω, reducing power losses.
  • High current capability of 6 A, ensuring robust performance.
  • MDmesh K5 technology for improved efficiency and reliability.
  • Compact TO-252 (DPAK) package for surface mount applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • High-voltage switching applications.
  • Industrial and consumer electronics requiring high power handling.

Q & A

  1. What is the voltage rating of the STD8N80K5 MOSFET? The voltage rating of the STD8N80K5 MOSFET is 800 V.
  2. What is the current rating of the STD8N80K5 MOSFET? The current rating of the STD8N80K5 MOSFET is 6 A (Tc).
  3. What is the power dissipation of the STD8N80K5 MOSFET? The power dissipation of the STD8N80K5 MOSFET is 110 W (Tc).
  4. What package type is the STD8N80K5 MOSFET available in? The STD8N80K5 MOSFET is available in the TO-252 (DPAK) package.
  5. What is the typical Rds(on) of the STD8N80K5 MOSFET? The typical Rds(on) of the STD8N80K5 MOSFET is 0.85 Ω.
  6. What is the gate threshold voltage range of the STD8N80K5 MOSFET? The gate threshold voltage range of the STD8N80K5 MOSFET is 3 V to 4 V.
  7. What technology is used in the STD8N80K5 MOSFET? The STD8N80K5 MOSFET uses MDmesh K5 technology.
  8. What are some common applications of the STD8N80K5 MOSFET? Common applications include power supplies, motor control, high-voltage switching, and industrial/consumer electronics.
  9. Where can I find detailed specifications for the STD8N80K5 MOSFET? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and distributors like Digi-Key.
  10. Is the STD8N80K5 MOSFET suitable for surface mount applications? Yes, the STD8N80K5 MOSFET is suitable for surface mount applications due to its TO-252 (DPAK) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD8N80K5 STD9N80K5 STD5N80K5 STD6N80K5 STD7N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 7A (Tc) 4A (Tc) 4.5A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3A, 10V 900mOhm @ 3.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V 12 nC @ 10 V 5 nC @ 10 V 7.5 nC @ 10 V 13.4 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 100 V 340 pF @ 100 V 177 pF @ 100 V 255 pF @ 100 V 360 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 60W (Tc) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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