STP4N80K5
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STMicroelectronics STP4N80K5

Manufacturer No:
STP4N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 3A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP4N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This proprietary vertical structure results in a dramatic reduction in on-resistance and ultra-low gate charge, making it ideal for applications requiring superior power density and high efficiency.

Key Specifications

Parameter Value Unit
Channel Type N
Maximum Continuous Drain Current 3 A
Maximum Drain Source Voltage 800 V
Package Type TO-220
Series MDmesh K5, SuperMESH5
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 2.5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5 V
Minimum Gate Threshold Voltage 3 V
Maximum Power Dissipation 60 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V V
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 10.5 nC @ 10 V
Transistor Material Si
Number of Elements per Chip 1
Length 10.4 mm
Width 4.6 mm
Height 15.75 mm

Key Features

  • Industry’s lowest RDS(on)x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

The STP4N80K5 is suitable for various high-power applications requiring superior power density and high efficiency, such as:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control
  • Power Conversion Systems
  • High-Voltage DC-DC Converters

Q & A

  1. What is the maximum drain source voltage of the STP4N80K5?

    The maximum drain source voltage is 800 V.

  2. What is the package type of the STP4N80K5?

    The package type is TO-220.

  3. What is the maximum continuous drain current of the STP4N80K5?

    The maximum continuous drain current is 3 A.

  4. What technology is used in the STP4N80K5?

    The STP4N80K5 is designed using MDmesh K5 technology.

  5. What is the maximum operating temperature of the STP4N80K5?

    The maximum operating temperature is +150 °C.

  6. What is the typical gate charge at Vgs=10V for the STP4N80K5?

    The typical gate charge at Vgs=10V is 10.5 nC.

  7. Is the STP4N80K5 Zener-protected?

    Yes, the STP4N80K5 is Zener-protected.

  8. What is the minimum operating temperature of the STP4N80K5?

    The minimum operating temperature is -55 °C.

  9. What is the maximum power dissipation of the STP4N80K5?

    The maximum power dissipation is 60 W.

  10. Is the STP4N80K5 100% avalanche tested?

    Yes, the STP4N80K5 is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP4N80K5 STP5N80K5 STP4N90K5 STP7N80K5 STP6N80K5 STP2N80K5 STP3N80K5 STP4LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4A (Tc) 3A (Tc) 6A (Tc) 4.5A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 2.1Ohm @ 1A, 10V 1.2Ohm @ 3A, 10V 1.6Ohm @ 2A, 10V 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 5 nC @ 10 V 5.3 nC @ 10 V 13.4 nC @ 10 V 7.5 nC @ 10 V 3 nC @ 10 V 9.5 nC @ 10 V 3.7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V 30V 30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V 177 pF @ 100 V 173 pF @ 100 V 360 pF @ 100 V 255 pF @ 100 V 95 pF @ 100 V 130 pF @ 100 V 122 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 110W (Tc) 85W (Tc) 45W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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