STP4N80K5
  • Share:

STMicroelectronics STP4N80K5

Manufacturer No:
STP4N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 3A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP4N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This proprietary vertical structure results in a dramatic reduction in on-resistance and ultra-low gate charge, making it ideal for applications requiring superior power density and high efficiency.

Key Specifications

Parameter Value Unit
Channel Type N
Maximum Continuous Drain Current 3 A
Maximum Drain Source Voltage 800 V
Package Type TO-220
Series MDmesh K5, SuperMESH5
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 2.5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5 V
Minimum Gate Threshold Voltage 3 V
Maximum Power Dissipation 60 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V V
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 10.5 nC @ 10 V
Transistor Material Si
Number of Elements per Chip 1
Length 10.4 mm
Width 4.6 mm
Height 15.75 mm

Key Features

  • Industry’s lowest RDS(on)x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

The STP4N80K5 is suitable for various high-power applications requiring superior power density and high efficiency, such as:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control
  • Power Conversion Systems
  • High-Voltage DC-DC Converters

Q & A

  1. What is the maximum drain source voltage of the STP4N80K5?

    The maximum drain source voltage is 800 V.

  2. What is the package type of the STP4N80K5?

    The package type is TO-220.

  3. What is the maximum continuous drain current of the STP4N80K5?

    The maximum continuous drain current is 3 A.

  4. What technology is used in the STP4N80K5?

    The STP4N80K5 is designed using MDmesh K5 technology.

  5. What is the maximum operating temperature of the STP4N80K5?

    The maximum operating temperature is +150 °C.

  6. What is the typical gate charge at Vgs=10V for the STP4N80K5?

    The typical gate charge at Vgs=10V is 10.5 nC.

  7. Is the STP4N80K5 Zener-protected?

    Yes, the STP4N80K5 is Zener-protected.

  8. What is the minimum operating temperature of the STP4N80K5?

    The minimum operating temperature is -55 °C.

  9. What is the maximum power dissipation of the STP4N80K5?

    The maximum power dissipation is 60 W.

  10. Is the STP4N80K5 100% avalanche tested?

    Yes, the STP4N80K5 is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.07
322

Please send RFQ , we will respond immediately.

Same Series
STU4N80K5
STU4N80K5
MOSFET N-CH 800V 3A IPAK
STF4N80K5
STF4N80K5
MOSFET N-CH 800V 3A TO220FP
STP4N80K5
STP4N80K5
MOSFET N-CH 800V 3A TO220

Similar Products

Part Number STP4N80K5 STP5N80K5 STP4N90K5 STP7N80K5 STP6N80K5 STP2N80K5 STP3N80K5 STP4LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4A (Tc) 3A (Tc) 6A (Tc) 4.5A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 2.1Ohm @ 1A, 10V 1.2Ohm @ 3A, 10V 1.6Ohm @ 2A, 10V 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 5 nC @ 10 V 5.3 nC @ 10 V 13.4 nC @ 10 V 7.5 nC @ 10 V 3 nC @ 10 V 9.5 nC @ 10 V 3.7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V 30V 30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V 177 pF @ 100 V 173 pF @ 100 V 360 pF @ 100 V 255 pF @ 100 V 95 pF @ 100 V 130 pF @ 100 V 122 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 110W (Tc) 85W (Tc) 45W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK