Overview
The STB6N80K5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh K5 technology. This device is designed for applications requiring high voltage and current handling capabilities. The MDmesh K5 technology ensures a superior on-resistance (RDS(on)) and a high figure of merit, which enhances power density and efficiency in various power management systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 800 | V |
| ID (Drain Current) | 4.5 | A |
| RDS(on) (On-Resistance) | 1.3 | Ω |
| PD (Power Dissipation) | 85 | W |
| Package | TO-263 (D2PAK) |
Key Features
- High Voltage Capability: Rated for 800 V drain-source voltage, making it suitable for high-voltage applications.
- Low On-Resistance: Typical RDS(on) of 1.3 Ω, which minimizes power losses and enhances efficiency.
- High Current Handling: Capable of handling up to 4.5 A of drain current.
- MDmesh K5 Technology: Utilizes STMicroelectronics' advanced MDmesh K5 technology for superior performance and power density.
- Compact Packaging: Available in the TO-263 (D2PAK) package, which is compact and suitable for surface mount applications.
Applications
- Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
- Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
- Industrial Automation: Applicable in various industrial automation systems that require reliable and efficient power management.
- Renewable Energy Systems: Useful in renewable energy systems, such as solar and wind power inverters, due to its high efficiency and reliability.
Q & A
- What is the maximum drain-source voltage of the STB6N80K5?
The maximum drain-source voltage (VDS) of the STB6N80K5 is 800 V.
- What is the typical on-resistance (RDS(on)) of the STB6N80K5?
The typical on-resistance (RDS(on)) of the STB6N80K5 is 1.3 Ω.
- What is the maximum drain current (ID) of the STB6N80K5?
The maximum drain current (ID) of the STB6N80K5 is 4.5 A.
- In what package is the STB6N80K5 available?
The STB6N80K5 is available in the TO-263 (D2PAK) package.
- What technology is used in the STB6N80K5?
The STB6N80K5 uses STMicroelectronics' advanced MDmesh K5 technology.
- What are some typical applications of the STB6N80K5?
The STB6N80K5 is typically used in high-voltage power supplies, motor control circuits, industrial automation systems, and renewable energy systems.
- What is the power dissipation (PD) of the STB6N80K5?
The power dissipation (PD) of the STB6N80K5 is 85 W.
- Is the STB6N80K5 suitable for surface mount applications?
Yes, the STB6N80K5 is suitable for surface mount applications due to its TO-263 (D2PAK) package.
- Why is the MDmesh K5 technology important in the STB6N80K5?
The MDmesh K5 technology ensures a superior on-resistance and a high figure of merit, enhancing power density and efficiency.
- Can the STB6N80K5 be used in automotive applications?
While the STB6N80K5 is not specifically marked as automotive-grade, it can be evaluated for use in automotive systems based on its specifications and the specific requirements of the application.
