BD438G
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onsemi BD438G

Manufacturer No:
BD438G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 45V 4A TO-225AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD438G is a plastic, medium-power silicon PNP transistor produced by onsemi. This transistor is part of the BD436G, BD438G, BD440G, and BD442G series, which are designed for amplifier and switching applications. The BD438G is Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic designs. It has complementary types in the BD437 and BD441 series.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
Collector-Base Voltage VCBO 45 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 4.0 Adc
Base Current IB 1.0 Adc
Total Device Dissipation @ TC = 25°C PD 36 W
Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C
Thermal Resistance, Junction-to-Case RJC 3.5 °C/W

Key Features

  • Pb-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
  • Medium-power silicon PNP transistor suitable for amplifier and switching applications.
  • High collector-emitter voltage (VCEO) of 45 V, making it robust for various power handling needs.
  • High collector current (IC) of up to 4.0 A, suitable for applications requiring significant current handling.
  • Wide operating and storage junction temperature range of –55 to +150°C, enhancing reliability in diverse environments.
  • Complementary types available in the BD437 and BD441 series for design flexibility.

Applications

  • Amplifier circuits: The BD438G can be used in various amplifier configurations due to its high current gain and robust voltage handling.
  • Switching applications: Its high collector current and low saturation voltage make it suitable for switching circuits.
  • Power management: Can be used in power management circuits where medium power handling is required.
  • Automotive and industrial electronics: The wide temperature range and robust specifications make it suitable for use in automotive and industrial environments.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BD438G?

    The collector-emitter voltage (VCEO) of the BD438G is 45 Vdc.

  2. Is the BD438G Pb-free and RoHS compliant?
  3. What is the maximum collector current (IC) of the BD438G?

    The maximum collector current (IC) of the BD438G is 4.0 A.

  4. What is the operating and storage junction temperature range of the BD438G?

    The operating and storage junction temperature range of the BD438G is –55 to +150°C.

  5. What are the complementary types of the BD438G?

    The complementary types of the BD438G are the BD437 and BD441 series.

  6. What is the thermal resistance, junction-to-case (RJC) of the BD438G?

    The thermal resistance, junction-to-case (RJC) of the BD438G is 3.5°C/W.

  7. What are typical applications of the BD438G?

    The BD438G is typically used in amplifier circuits, switching applications, power management, and in automotive and industrial electronics.

  8. What is the base-emitter on voltage (VBE(ON)) of the BD438G?

    The base-emitter on voltage (VBE(ON)) of the BD438G is approximately 1.1 Vdc.

  9. What is the collector saturation voltage (VCE(sat)) of the BD438G?

    The collector saturation voltage (VCE(sat)) of the BD438G is approximately 0.7 Vdc.

  10. Is the BD438G suitable for high-frequency applications?

    The BD438G has a current-gain-bandwidth product (fT) of 3.0 MHz, making it suitable for medium-frequency applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 300mA, 3A
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 1V
Power - Max:36 W
Frequency - Transition:3MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
BD442G
BD442G
TRANS PNP 80V 4A TO126
BD436T
BD436T
TRANS PNP 32V 4A TO126
BD436TG
BD436TG
TRANS PNP 32V 4A TO126
BD438G
BD438G
TRANS PNP 45V 4A TO-225AA
BD440
BD440
TRANS PNP 60V 4A TO126
BD440G
BD440G
TRANS PNP 60V 4A TO126
BD438TG
BD438TG
TRANS PNP 45V 4A

Similar Products

Part Number BD438G BD438S BD439G BD438TG BD435G BD436G BD437G BD438
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Active Obsolete Active Active Active
Transistor Type PNP PNP NPN PNP NPN - NPN PNP
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A - 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 60 V 45 V 32 V - 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 300mA, 3A 600mV @ 200mA, 2A 800mV @ 300mA, 3A 700mV @ 300mA, 3A 500mV @ 200mA, 2A - 800mV @ 300mA, 3A 600mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA 100µA (ICBO) 100µA (ICBO) 100µA (ICBO) - 100µA (ICBO) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA, 1V 30 @ 10mA, 5V 40 @ 500mA, 1V 85 @ 500mA, 1V 85 @ 500mA, 1V - 85 @ 500mA, 1V 30 @ 10mA, 5V
Power - Max 36 W 36 W 36 W 36 W 36 W - 36 W 36 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz 3MHz - 3MHz 3MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole - Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 - TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126-3 TO-126 TO-126 TO-126 - TO-126 SOT-32-3

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