BD437
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STMicroelectronics BD437

Manufacturer No:
BD437
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 45V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The BD437 is an NPN silicon epitaxial-base power transistor manufactured by STMicroelectronics. It is housed in a JEDEC SOT-32 plastic package and is designed for use in medium power linear and switching applications. The transistor is part of a complementary pair, with the PNP type being the BD438. It is suitable for various industrial and power management applications due to its robust performance and reliable operation.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 45 V
Collector-Emitter Voltage (VCEO) 45 V
Collector Current (IC) 4 A
Collector Peak Current (ICM) 7 A (t ≤ 10 ms)
Base Current (IB) 1 A
Total Dissipation at Tc ≤ 25°C (Ptot) 36 W
Storage Temperature (Tstg) -65 to 150 °C
Max. Operating Junction Temperature (Tj) 150 °C
Emitter-Base Voltage (VEBO) 5 V
Collector-Emitter Saturation Voltage (VCE(sat)) 0.6 V
DC Current Gain (hFE) 30-140 -
Transition Frequency (fT) 3 MHz

Key Features

  • High Collector-Emitter Voltage: Up to 45V, making it suitable for a variety of power applications.
  • High Collector Current: Up to 4A, enabling it to handle medium power requirements.
  • Low Collector-Emitter Saturation Voltage: 0.6V, which indicates efficient performance in switching applications.
  • Robust Thermal Performance: Maximum operating junction temperature of 150°C and total dissipation of 36W at Tc ≤ 25°C.
  • Complementary PNP Type: The BD438, allowing for balanced circuit designs.

Applications

  • Medium Power Linear Applications: Suitable for use in car-radio output stages and other linear power applications.
  • Switching Applications: Ideal for switching circuits due to its high collector-emitter voltage and low saturation voltage.
  • Industrial Power Management: Used in various industrial power management systems requiring reliable and efficient power handling.

Q & A

  1. What is the BD437 transistor?

    The BD437 is an NPN silicon epitaxial-base power transistor manufactured by STMicroelectronics, intended for medium power linear and switching applications.

  2. What is the maximum collector-emitter voltage of the BD437?

    The maximum collector-emitter voltage (VCEO) of the BD437 is 45V.

  3. What is the maximum collector current of the BD437?

    The maximum collector current (IC) of the BD437 is 4A.

  4. What is the complementary PNP type of the BD437?

    The complementary PNP type of the BD437 is the BD438.

  5. What is the maximum operating junction temperature of the BD437?

    The maximum operating junction temperature (Tj) of the BD437 is 150°C.

  6. What is the collector-emitter saturation voltage of the BD437?

    The collector-emitter saturation voltage (VCE(sat)) of the BD437 is 0.6V.

  7. What are the typical applications of the BD437?

    The BD437 is typically used in medium power linear applications, switching applications, and industrial power management systems.

  8. What is the package type of the BD437?

    The BD437 is housed in a JEDEC SOT-32 plastic package.

  9. What is the total dissipation at Tc ≤ 25°C for the BD437?

    The total dissipation at Tc ≤ 25°C (Ptot) for the BD437 is 36W.

  10. What is the transition frequency of the BD437?

    The transition frequency (fT) of the BD437 is 3 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 200mA, 2A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Power - Max:36 W
Frequency - Transition:3MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Similar Products

Part Number BD437 BD437S BD438 BD437G BD537 BD437T BD439 BD434 BD435 BD436
Manufacturer STMicroelectronics Fairchild Semiconductor STMicroelectronics onsemi STMicroelectronics onsemi onsemi STMicroelectronics onsemi STMicroelectronics
Product Status Not For New Designs Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP NPN NPN NPN NPN PNP NPN PNP
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 8 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 80 V 45 V 60 V 22 V 32 V 32 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A 600mV @ 200mA, 2A 600mV @ 200mA, 2A 800mV @ 300mA, 3A 800mV @ 600mA, 6A 800mV @ 300mA, 3A 800mV @ 300mA, 3A 500mV @ 200mA, 2A 500mV @ 200mA, 2A 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100µA 100µA 100µA 100µA (ICBO) 100µA 100µA (ICBO) 100µA (ICBO) 100µA 100µA (ICBO) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V 30 @ 10mA, 5V 30 @ 10mA, 5V 85 @ 500mA, 1V 15 @ 2A, 2V 85 @ 500mA, 1V 40 @ 500mA, 1V 40 @ 10mA, 5V 85 @ 500mA, 1V 40 @ 10mA, 5V
Power - Max 36 W 36 W 36 W 36 W 50 W 36 W 36 W 36 W 36 W 36 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz - 3MHz 3MHz 3MHz 3MHz 3MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-220-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126-3 SOT-32-3 TO-126 TO-220 TO-126 TO-126 SOT-32-3 TO-126 SOT-32-3

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