Overview
The BD437T is a medium-power NPN epitaxial silicon transistor produced by onsemi. This transistor is part of the BD433/435/437 series, designed for medium power linear and switching applications. It is packaged in a TO-126 case, making it suitable for a variety of electronic circuits that require reliable and efficient transistor performance.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 45 | V |
| Collector-Emitter Voltage (VCEO) | 45 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (DC) (IC) | 4 | A |
| Collector Current (Pulse) (ICP) | 7 | A |
| Base Current (IB) | 1 | A |
| Collector Dissipation (PC) | 36 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| DC Current Gain (hFE) at IC = 10 mA, VCE = 5 V | 30 | |
| DC Current Gain (hFE) at IC = 500 mA, VCE = 1 V | 85 | |
| DC Current Gain (hFE) at IC = 2 A, VCE = 1 V | 40 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 2 A, IB = 0.2 A | 0.5 | V |
| Base-Emitter On Voltage (VBE(on)) at IC = 2 A, VCE = 1 V | 1.1 | V |
| Current-Gain Bandwidth Product (fT) at VCE = 1 V, IC = 250 mA | 3 | MHz |
Key Features
- Medium power linear and switching applications
- High collector current capability up to 4 A (DC) and 7 A (pulse)
- High collector-emitter voltage up to 45 V
- High DC current gain (hFE) with values up to 85 at different collector currents
- Low collector-emitter saturation voltage (VCE(sat)) of 0.5 V
- Low base-emitter on voltage (VBE(on)) of 1.1 V
- Current-gain bandwidth product (fT) of 3 MHz
Applications
- Power amplifiers and switching circuits
- Motor control and drive circuits
- Relay drivers and interface circuits
- General-purpose amplification and switching in industrial and consumer electronics
Q & A
- What is the maximum collector current for the BD437T transistor?
The maximum collector current for the BD437T transistor is 4 A (DC) and 7 A (pulse).
- What is the collector-emitter voltage rating for the BD437T transistor?
The collector-emitter voltage rating for the BD437T transistor is 45 V.
- What is the typical DC current gain (hFE) of the BD437T transistor at IC = 500 mA, VCE = 1 V?
The typical DC current gain (hFE) of the BD437T transistor at IC = 500 mA, VCE = 1 V is 85.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD437T transistor at IC = 2 A, IB = 0.2 A?
The collector-emitter saturation voltage (VCE(sat)) of the BD437T transistor at IC = 2 A, IB = 0.2 A is 0.5 V.
- What is the base-emitter on voltage (VBE(on)) of the BD437T transistor at IC = 2 A, VCE = 1 V?
The base-emitter on voltage (VBE(on)) of the BD437T transistor at IC = 2 A, VCE = 1 V is 1.1 V.
- What is the current-gain bandwidth product (fT) of the BD437T transistor?
The current-gain bandwidth product (fT) of the BD437T transistor is 3 MHz at VCE = 1 V, IC = 250 mA.
- In what package is the BD437T transistor available?
The BD437T transistor is available in a TO-126 package.
- What are the typical applications of the BD437T transistor?
The BD437T transistor is typically used in power amplifiers, switching circuits, motor control, relay drivers, and general-purpose amplification and switching in industrial and consumer electronics.
- What is the maximum junction temperature for the BD437T transistor?
The maximum junction temperature for the BD437T transistor is 150°C.
- What is the storage temperature range for the BD437T transistor?
The storage temperature range for the BD437T transistor is -65°C to 150°C.
