Overview
The STP11NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh II series, utilizing MDmesh II technology to achieve superior switching performance and low on-resistance. It is packaged in a DPAK (TO-252) package, making it suitable for a variety of high-power applications. The STP11NM60ND is designed to operate at high voltages and currents, with features such as a fast-recovery body diode, low gate charge, and high dv/dt ruggedness.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 10 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 6.3 | A |
| Pulsed Drain Current (IDM) | 40 | A |
| Total Power Dissipation at TC = 25 °C | 90 | W |
| Maximum Operating Junction Temperature (TJ) | 150 | °C |
| Static Drain-Source On-Resistance (RDS(on)) | 370 - 450 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Input Capacitance (Ciss) | 850 | pF |
| Output Capacitance (Coss) | 44 | pF |
| Reverse Transfer Capacitance (Crss) | 5 | pF |
Key Features
- Fast-Recovery Body Diode: Enhances switching performance and reduces losses.
- Low Gate Charge and Input Capacitance: Improves switching speed and efficiency.
- Low On-Resistance (RDS(on)): Minimizes power losses during operation.
- 100% Avalanche Tested: Ensures robustness against high-energy pulses.
- High dv/dt Ruggedness: Provides reliability in high-frequency switching applications.
Applications
The STP11NM60ND is ideal for various high-power switching applications, including:
- Switching Applications: Such as DC-DC converters, power supplies, and motor drives.
- Bridge Topologies: Suitable for full-bridge, half-bridge, and other bridge configurations.
- ZVS Phase-Shift Converters: Used in zero-voltage switching phase-shift converters for high efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP11NM60ND?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at 25 °C and 100 °C?
The continuous drain current (ID) is 10 A at 25 °C and 6.3 A at 100 °C.
- What is the typical on-resistance (RDS(on)) of the STP11NM60ND?
The typical on-resistance (RDS(on)) is 370 mΩ.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 3 to 5 V.
- What are the key features of the STP11NM60ND?
The key features include a fast-recovery body diode, low gate charge and input capacitance, low on-resistance, 100% avalanche tested, and high dv/dt ruggedness.
- In what package is the STP11NM60ND available?
The STP11NM60ND is available in a DPAK (TO-252) package.
- What are the typical applications of the STP11NM60ND?
The typical applications include switching applications, bridge topologies, and ZVS phase-shift converters.
- What is the maximum operating junction temperature (TJ) of the STP11NM60ND?
The maximum operating junction temperature (TJ) is 150 °C.
- What is the total power dissipation at 25 °C?
The total power dissipation at 25 °C is 90 W.
- Is the STP11NM60ND environmentally compliant?
Yes, the STP11NM60ND is available in ECOPACK packages, which meet various environmental compliance standards.
