Overview
The STP13NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II series, utilizing the second generation of MDmesh™ technology. It features a strip-layout vertical structure, which results in extremely low on-resistance and superior switching performance. The STP13NM60ND is available in the TO-220 package and is designed for high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Drain Current (ID) Continuous at TC = 25°C | 11 | A |
| Drain Current (ID) Continuous at TC = 100°C | 6.93 | A |
| Pulsed Drain Current (IDM) | 44 | A |
| Total Dissipation at TC = 25°C | 109 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.38 Ω (max) | Ω |
| Gate Threshold Voltage (VGS(th)) | 3-5 V | V |
| Turn-On Delay Time (td(on)) | 46.5 ns (typ) | ns |
| Turn-Off Delay Time (td(off)) | 9.6 ns (typ) | ns |
| Rise Time (tr) | 10 ns (typ) | ns |
| Fall Time (tf) | 15.4 ns (typ) | ns |
Key Features
- The worldwide best RDS(on) area among fast recovery diode devices.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.
- Extremely high dv/dt and avalanche capabilities.
- Intrinsic fast-recovery body diode.
Applications
- Switching applications.
- Bridge topologies.
- ZVS phase-shift converters.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP13NM60ND?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STP13NM60ND?
The typical on-resistance (RDS(on)) is 0.32 Ω.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 11 A.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 46.5 ns, and the typical turn-off delay time (td(off)) is 9.6 ns.
- What are the key features of the FDmesh™ II technology used in the STP13NM60ND?
The FDmesh™ II technology features extremely low on-resistance, low input capacitance and gate charge, and high dv/dt and avalanche capabilities.
- In which packages is the STP13NM60ND available?
The STP13NM60ND is available in the TO-220 package.
- What are some common applications for the STP13NM60ND?
Common applications include switching applications, bridge topologies, and ZVS phase-shift converters.
- Does the STP13NM60ND have an intrinsic fast-recovery body diode?
Yes, the STP13NM60ND has an intrinsic fast-recovery body diode.
- What is the maximum gate-source voltage (VGS) for the STP13NM60ND?
The maximum gate-source voltage (VGS) is ±25 V.
- Is the STP13NM60ND 100% avalanche tested?
Yes, the STP13NM60ND is 100% avalanche tested.
