STF13NM60ND
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STMicroelectronics STF13NM60ND

Manufacturer No:
STF13NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 11A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF13NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II series, utilizing the second generation of MDmesh™ technology. It features a new strip-layout vertical structure, which provides extremely low on-resistance and superior switching performance. The STF13NM60ND is available in the TO-220FP package and is designed for high-power switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Drain Current (ID) at TC = 25°C11A
Drain Current (ID) at TC = 100°C6.93A
Pulsed Drain Current (IDM)44A
Total Dissipation at TC = 25°C109W
Static Drain-Source On-Resistance (RDS(on))0.32 (typ), 0.38 (max)Ω
Gate Threshold Voltage (VGS(th))3-5V
Turn-on Delay Time (td(on))46.5 (typ)ns
Rise Time (tr)10 (typ)ns
Turn-off Delay Time (td(off))9.6 (typ)ns
Fall Time (tf)15.4 (typ)ns

Key Features

  • Worldwide best RDS(on) area among fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities
  • Intrinsic fast-recovery body diode

Applications

  • Switching applications
  • Bridge topologies
  • ZVS phase-shift converters

Q & A

  1. What is the maximum drain-source voltage of the STF13NM60ND?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STF13NM60ND?
    The typical on-resistance is 0.32 Ω.
  3. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 11 A.
  4. What is the package type of the STF13NM60ND?
    The package type is TO-220FP.
  5. What technology is used in the STF13NM60ND?
    The device uses the second generation of MDmesh™ technology and FDmesh™ II.
  6. What are the key applications of the STF13NM60ND?
    The key applications include switching applications, bridge topologies, and ZVS phase-shift converters.
  7. What is the gate threshold voltage range of the STF13NM60ND?
    The gate threshold voltage range is 3-5 V.
  8. What is the typical turn-on delay time of the STF13NM60ND?
    The typical turn-on delay time is 46.5 ns.
  9. Does the STF13NM60ND have an intrinsic fast-recovery body diode?
    Yes, it does.
  10. What is the maximum total dissipation at 25°C?
    The maximum total dissipation at 25°C is 109 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:845 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STF13NM60ND
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MOSFET N-CH 600V 11A TO220FP
STD13NM60ND
STD13NM60ND
MOSFET N-CH 600V 11A DPAK

Similar Products

Part Number STF13NM60ND STF23NM60ND STF15NM60ND STF18NM60ND STF10NM60ND STF11NM60ND STF13NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 19.5A (Tc) 14A (Tc) 13A (Tc) 8A (Tc) 10A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V 180mOhm @ 10A, 10V 299mOhm @ 7A, 10V 290mOhm @ 6.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V 70 nC @ 10 V 40 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 845 pF @ 50 V 2050 pF @ 50 V 1250 pF @ 50 V 1030 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V 790 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 35W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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