Overview
The STF13NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II series, utilizing the second generation of MDmesh™ technology. It features a new strip-layout vertical structure, which provides extremely low on-resistance and superior switching performance. The STF13NM60ND is available in the TO-220FP package and is designed for high-power switching applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 600 | V |
Gate-Source Voltage (VGS) | ±25 | V |
Drain Current (ID) at TC = 25°C | 11 | A |
Drain Current (ID) at TC = 100°C | 6.93 | A |
Pulsed Drain Current (IDM) | 44 | A |
Total Dissipation at TC = 25°C | 109 | W |
Static Drain-Source On-Resistance (RDS(on)) | 0.32 (typ), 0.38 (max) | Ω |
Gate Threshold Voltage (VGS(th)) | 3-5 | V |
Turn-on Delay Time (td(on)) | 46.5 (typ) | ns |
Rise Time (tr) | 10 (typ) | ns |
Turn-off Delay Time (td(off)) | 9.6 (typ) | ns |
Fall Time (tf) | 15.4 (typ) | ns |
Key Features
- Worldwide best RDS(on) area among fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
- Intrinsic fast-recovery body diode
Applications
- Switching applications
- Bridge topologies
- ZVS phase-shift converters
Q & A
- What is the maximum drain-source voltage of the STF13NM60ND?
The maximum drain-source voltage is 600 V. - What is the typical on-resistance of the STF13NM60ND?
The typical on-resistance is 0.32 Ω. - What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 11 A. - What is the package type of the STF13NM60ND?
The package type is TO-220FP. - What technology is used in the STF13NM60ND?
The device uses the second generation of MDmesh™ technology and FDmesh™ II. - What are the key applications of the STF13NM60ND?
The key applications include switching applications, bridge topologies, and ZVS phase-shift converters. - What is the gate threshold voltage range of the STF13NM60ND?
The gate threshold voltage range is 3-5 V. - What is the typical turn-on delay time of the STF13NM60ND?
The typical turn-on delay time is 46.5 ns. - Does the STF13NM60ND have an intrinsic fast-recovery body diode?
Yes, it does. - What is the maximum total dissipation at 25°C?
The maximum total dissipation at 25°C is 109 W.