STF13NM60ND
  • Share:

STMicroelectronics STF13NM60ND

Manufacturer No:
STF13NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 11A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF13NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II series, utilizing the second generation of MDmesh™ technology. It features a new strip-layout vertical structure, which provides extremely low on-resistance and superior switching performance. The STF13NM60ND is available in the TO-220FP package and is designed for high-power switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Drain Current (ID) at TC = 25°C11A
Drain Current (ID) at TC = 100°C6.93A
Pulsed Drain Current (IDM)44A
Total Dissipation at TC = 25°C109W
Static Drain-Source On-Resistance (RDS(on))0.32 (typ), 0.38 (max)Ω
Gate Threshold Voltage (VGS(th))3-5V
Turn-on Delay Time (td(on))46.5 (typ)ns
Rise Time (tr)10 (typ)ns
Turn-off Delay Time (td(off))9.6 (typ)ns
Fall Time (tf)15.4 (typ)ns

Key Features

  • Worldwide best RDS(on) area among fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities
  • Intrinsic fast-recovery body diode

Applications

  • Switching applications
  • Bridge topologies
  • ZVS phase-shift converters

Q & A

  1. What is the maximum drain-source voltage of the STF13NM60ND?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STF13NM60ND?
    The typical on-resistance is 0.32 Ω.
  3. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 11 A.
  4. What is the package type of the STF13NM60ND?
    The package type is TO-220FP.
  5. What technology is used in the STF13NM60ND?
    The device uses the second generation of MDmesh™ technology and FDmesh™ II.
  6. What are the key applications of the STF13NM60ND?
    The key applications include switching applications, bridge topologies, and ZVS phase-shift converters.
  7. What is the gate threshold voltage range of the STF13NM60ND?
    The gate threshold voltage range is 3-5 V.
  8. What is the typical turn-on delay time of the STF13NM60ND?
    The typical turn-on delay time is 46.5 ns.
  9. Does the STF13NM60ND have an intrinsic fast-recovery body diode?
    Yes, it does.
  10. What is the maximum total dissipation at 25°C?
    The maximum total dissipation at 25°C is 109 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:845 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$4.43
88

Please send RFQ , we will respond immediately.

Same Series
STF13NM60ND
STF13NM60ND
MOSFET N-CH 600V 11A TO220FP
STD13NM60ND
STD13NM60ND
MOSFET N-CH 600V 11A DPAK

Similar Products

Part Number STF13NM60ND STF23NM60ND STF15NM60ND STF18NM60ND STF10NM60ND STF11NM60ND STF13NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 19.5A (Tc) 14A (Tc) 13A (Tc) 8A (Tc) 10A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V 180mOhm @ 10A, 10V 299mOhm @ 7A, 10V 290mOhm @ 6.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V 70 nC @ 10 V 40 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 845 pF @ 50 V 2050 pF @ 50 V 1250 pF @ 50 V 1030 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V 790 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 35W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24