Overview
The STF15NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh II series, utilizing MDmesh II technology, which features a new strip-layout vertical structure. This design enhances the MOSFET's switching performance and reduces on-resistance. The STF15NM60ND is housed in a TO-220FP package, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±25 | V |
| Continuous drain current (ID) at TC = 25 °C | 11 | A |
| Pulsed drain current (IDM) | 44 | A |
| Total power dissipation (PTOT) at TC = 25 °C | 25 | W |
| Maximum operating junction temperature (TJ) | 150 | °C |
| Static drain-source on-resistance (RDS(on)) | 325 - 380 | mΩ |
| Gate threshold voltage (VGS(th)) | 3 - 5 | V |
| Input capacitance (Ciss) | 845 | pF |
| Output capacitance (Coss) | 47 | pF |
| Reverse transfer capacitance (Crss) | 2.5 | pF |
Key Features
- Fast-recovery body diode: Enhances switching performance and reduces losses.
- Low gate charge and input capacitance: Improves switching speed and efficiency.
- Low on-resistance (RDS(on)): Minimizes power losses during operation.
- 100% avalanche tested: Ensures robustness against high-energy pulses.
- High dv/dt ruggedness: Provides reliability in high-frequency switching applications.
Applications
- Switching applications: Suitable for high-frequency switching in various power conversion systems.
- Bridge topologies: Ideal for use in bridge configurations due to its low on-resistance and fast recovery diode.
- ZVS phase-shift converters: Optimized for zero-voltage switching applications, enhancing efficiency and reducing EMI.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF15NM60ND?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at 25 °C for the STF15NM60ND?
The continuous drain current (ID) at 25 °C is 11 A.
- What is the typical static drain-source on-resistance (RDS(on)) of the STF15NM60ND?
The typical static drain-source on-resistance (RDS(on)) is 325 mΩ.
- What is the maximum operating junction temperature (TJ) for the STF15NM60ND?
The maximum operating junction temperature (TJ) is 150 °C.
- Is the STF15NM60ND 100% avalanche tested?
Yes, the STF15NM60ND is 100% avalanche tested.
- What is the package type of the STF15NM60ND?
The package type is TO-220FP.
- What are some common applications for the STF15NM60ND?
Common applications include switching applications, bridge topologies, and ZVS phase-shift converters.
- What is the gate threshold voltage (VGS(th)) range for the STF15NM60ND?
The gate threshold voltage (VGS(th)) range is 3 to 5 V.
- Does the STF15NM60ND have a fast-recovery body diode?
Yes, the STF15NM60ND features a fast-recovery body diode.
- What is the input capacitance (Ciss) of the STF15NM60ND?
The input capacitance (Ciss) is 845 pF.
