STF15NM60ND
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STMicroelectronics STF15NM60ND

Manufacturer No:
STF15NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 14A TO220FP
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STF15NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh II series, utilizing MDmesh II technology, which features a new strip-layout vertical structure. This design enhances the MOSFET's switching performance and reduces on-resistance. The STF15NM60ND is housed in a TO-220FP package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Gate-source voltage (VGS) ±25 V
Continuous drain current (ID) at TC = 25 °C 11 A
Pulsed drain current (IDM) 44 A
Total power dissipation (PTOT) at TC = 25 °C 25 W
Maximum operating junction temperature (TJ) 150 °C
Static drain-source on-resistance (RDS(on)) 325 - 380
Gate threshold voltage (VGS(th)) 3 - 5 V
Input capacitance (Ciss) 845 pF
Output capacitance (Coss) 47 pF
Reverse transfer capacitance (Crss) 2.5 pF

Key Features

  • Fast-recovery body diode: Enhances switching performance and reduces losses.
  • Low gate charge and input capacitance: Improves switching speed and efficiency.
  • Low on-resistance (RDS(on)): Minimizes power losses during operation.
  • 100% avalanche tested: Ensures robustness against high-energy pulses.
  • High dv/dt ruggedness: Provides reliability in high-frequency switching applications.

Applications

  • Switching applications: Suitable for high-frequency switching in various power conversion systems.
  • Bridge topologies: Ideal for use in bridge configurations due to its low on-resistance and fast recovery diode.
  • ZVS phase-shift converters: Optimized for zero-voltage switching applications, enhancing efficiency and reducing EMI.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF15NM60ND?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current (ID) at 25 °C for the STF15NM60ND?

    The continuous drain current (ID) at 25 °C is 11 A.

  3. What is the typical static drain-source on-resistance (RDS(on)) of the STF15NM60ND?

    The typical static drain-source on-resistance (RDS(on)) is 325 mΩ.

  4. What is the maximum operating junction temperature (TJ) for the STF15NM60ND?

    The maximum operating junction temperature (TJ) is 150 °C.

  5. Is the STF15NM60ND 100% avalanche tested?

    Yes, the STF15NM60ND is 100% avalanche tested.

  6. What is the package type of the STF15NM60ND?

    The package type is TO-220FP.

  7. What are some common applications for the STF15NM60ND?

    Common applications include switching applications, bridge topologies, and ZVS phase-shift converters.

  8. What is the gate threshold voltage (VGS(th)) range for the STF15NM60ND?

    The gate threshold voltage (VGS(th)) range is 3 to 5 V.

  9. Does the STF15NM60ND have a fast-recovery body diode?

    Yes, the STF15NM60ND features a fast-recovery body diode.

  10. What is the input capacitance (Ciss) of the STF15NM60ND?

    The input capacitance (Ciss) is 845 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF15NM60ND STF25NM60ND STF18NM60ND STF10NM60ND STF11NM60ND STF13NM60ND STF15NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 21A (Tc) 13A (Tc) 8A (Tc) 10A (Tc) 11A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 7A, 10V 160mOhm @ 10.5A, 10V 290mOhm @ 6.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V 380mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 80 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V 30 nC @ 10 V 24.5 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 50 V 2400 pF @ 50 V 1030 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V 845 pF @ 50 V 1250 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 30W (Tc) 40W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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