STP18NM60ND
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STMicroelectronics STP18NM60ND

Manufacturer No:
STP18NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP18NM60ND is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ II technology. This device is characterized by its low on-resistance and gate charge, making it one of the most efficient Power MOSFETs available. It is packaged in a TO-220 format and features a vertical structure combined with a strip layout, enhancing its electrical performance.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)600 V
Continuous Drain Current (Id)13 A
Drain-Source On-Resistance (Rds On)0.25 Ω (typ.)
Gate-Source Voltage (Vgs)±20 V
Package TypeTO-220
RoHS ComplianceEcopack2
GradeIndustrial

Key Features

  • Low on-resistance (Rds On) of 0.25 Ω (typ.) for high efficiency.
  • High continuous drain current (Id) of 13 A.
  • Intrinsic fast-recovery body diode.
  • Vertical structure combined with strip layout for enhanced performance.
  • ECOPACK®2 compliant, ensuring environmental sustainability.

Applications

The STP18NM60ND is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-frequency switching applications.

Q & A

  1. What is the drain-source breakdown voltage of the STP18NM60ND?
    The drain-source breakdown voltage (Vds) is 600 V.
  2. What is the typical on-resistance of the STP18NM60ND?
    The typical on-resistance (Rds On) is 0.25 Ω.
  3. What is the continuous drain current rating of the STP18NM60ND?
    The continuous drain current (Id) is 13 A.
  4. In what package is the STP18NM60ND available?
    The STP18NM60ND is available in a TO-220 package.
  5. Is the STP18NM60ND RoHS compliant?
    Yes, the STP18NM60ND is RoHS compliant with an ECOPACK®2 rating.
  6. What technology is used in the STP18NM60ND?
    The STP18NM60ND is developed using the second generation of MDmesh™ II technology.
  7. What are the typical applications of the STP18NM60ND?
    The STP18NM60ND is typically used in power supplies, DC-DC converters, motor control, industrial automation, and high-frequency switching applications.
  8. Is the STP18NM60ND suitable for automotive or aerospace applications?
    No, the STP18NM60ND is not authorized for use in automotive, aerospace, or safety-critical applications unless specifically designated by STMicroelectronics.
  9. What is the gate-source voltage range for the STP18NM60ND?
    The gate-source voltage (Vgs) range is ±20 V.
  10. Is the STP18NM60ND available in different environmental compliance grades?
    Yes, the STP18NM60ND is available in different grades of ECOPACK® packages, depending on their level of environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP18NM60ND STP28NM60ND STP13NM60ND STP15NM60ND STP18NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 23A (Tc) 11A (Tc) 14A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V 150mOhm @ 11.5A, 10V 380mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V 285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 62.5 nC @ 10 V 24.5 nC @ 10 V 40 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1030 pF @ 50 V 2090 pF @ 100 V 845 pF @ 50 V 1250 pF @ 50 V 1000 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 110W (Tc) 190W (Tc) 109W (Tc) 125W (Tc) 110W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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