STP18NM60N
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STMicroelectronics STP18NM60N

Manufacturer No:
STP18NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220AB
Delivery:
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Product Introduction

Overview

The STP18NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its high efficiency and low on-resistance, making it suitable for the most demanding high-efficiency converters. Available in the TO-220 package, it combines a vertical structure with a strip layout to achieve one of the world’s lowest on-resistance and gate charge values.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)600V
Gate-source voltage (VGS)± 25V
Drain current (continuous) at TC = 25 °C (ID)13A
Drain current (continuous) at TC = 100 °C (ID)8.2A
Drain current (pulsed) (IDM)52A
Total dissipation at TC = 25 °C (PTOT)110W
Static drain-source on-resistance (RDS(on))0.260 - 0.285Ω
Gate threshold voltage (VGS(th))2 - 4V
Gate body leakage current (IGSS)±100 nAnA

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Available in TO-220 package
  • ECOPACK® compliant for environmental sustainability

Applications

The STP18NM60N is primarily used in switching applications, including high-efficiency converters, power supplies, and other high-power electronic systems that require low on-resistance and high efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STP18NM60N?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STP18NM60N?
    The typical on-resistance is 0.260 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current at 25 °C is 13 A.
  4. What is the gate-source voltage range?
    The gate-source voltage range is ± 25 V.
  5. What technology is used in the STP18NM60N?
    The STP18NM60N uses the second generation of MDmesh™ technology.
  6. What are the typical applications of the STP18NM60N?
    The STP18NM60N is used in switching applications and high-efficiency converters.
  7. What package types are available for the STP18NM60N?
    The STP18NM60N is available in the TO-220 package.
  8. Is the STP18NM60N environmentally compliant?
    Yes, the STP18NM60N is ECOPACK® compliant.
  9. What is the maximum total dissipation at 25 °C?
    The maximum total dissipation at 25 °C is 110 W.
  10. What is the gate threshold voltage range?
    The gate threshold voltage range is 2 - 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP18NM60N
STP18NM60N
MOSFET N-CH 600V 13A TO220AB
STW18NM60N
STW18NM60N
MOSFET N-CH 600V 13A TO247-3
STB18NM60N
STB18NM60N
MOSFET N-CH 600V 13A D2PAK

Similar Products

Part Number STP18NM60N STP18NM60ND STP12NM60N STP13NM60N STP15NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 10A (Tc) 11A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 285mOhm @ 6.5A, 10V 290mOhm @ 6.5A, 10V 410mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 34 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V 1030 pF @ 50 V 960 pF @ 50 V 790 pF @ 50 V 1250 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 90W (Tc) 90W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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