STP11NM60FD
  • Share:

STMicroelectronics STP11NM60FD

Manufacturer No:
STP11NM60FD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 11A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP11NM60FD is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of ST's STripFET F8 technology, which features an enhanced trench gate structure. It is designed to offer low on-resistance and gate charge, making it highly efficient for various power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Continuous Drain Current) 11 A
RDS(on) (On-Resistance) 0.14 Ω
PD (Power Dissipation) 160 W
Package TO-220, TO-220FP
Avalanche Tested 100%
Zener Protection Yes

Key Features

  • Enhanced trench gate structure using ST's STripFET F8 technology.
  • Low on-resistance (RDS(on)) of 0.14 Ω.
  • Low gate charge.
  • 100% avalanche tested.
  • Zener-protected.
  • High power dissipation capability of up to 160 W.

Applications

  • Flyback converters.
  • LED lighting systems.
  • Power management in various industrial and consumer electronics.

Q & A

  1. What is the maximum drain-source voltage of the STP11NM60FD?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current rating of the STP11NM60FD?

    The continuous drain current (ID) is 11 A.

  3. What is the on-resistance of the STP11NM60FD?

    The on-resistance (RDS(on)) is 0.14 Ω.

  4. What package types are available for the STP11NM60FD?

    The device is available in TO-220 and TO-220FP packages.

  5. Is the STP11NM60FD avalanche tested?

    Yes, the STP11NM60FD is 100% avalanche tested.

  6. Does the STP11NM60FD have Zener protection?

    Yes, the STP11NM60FD has Zener protection.

  7. What are some common applications of the STP11NM60FD?

    Common applications include flyback converters and LED lighting systems.

  8. What technology does the STP11NM60FD use?

    The STP11NM60FD uses ST's STripFET F8 technology.

  9. What is the power dissipation capability of the STP11NM60FD?

    The power dissipation capability is up to 160 W.

  10. Where can I find detailed specifications for the STP11NM60FD?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$5.44
85

Please send RFQ , we will respond immediately.

Same Series
STP11NM60FDFP
STP11NM60FDFP
MOSFET N-CH 600V 11A TO220FP
STB11NM60FDT4
STB11NM60FDT4
MOSFET N-CH 600V 11A D2PAK

Similar Products

Part Number STP11NM60FD STP11NM60ND STP11NM60FP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 10A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±30V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V 850 pF @ 50 V 1000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 160W (Tc) 90W (Tc) 35W (Tc)
Operating Temperature - 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220FP
Package / Case TO-220-3 TO-220-3 TO-220-3 Full Pack

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON