STP11NM60FDFP
  • Share:

STMicroelectronics STP11NM60FDFP

Manufacturer No:
STP11NM60FDFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 11A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP11NM60FDFP is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is known for its high efficiency and is suitable for demanding high-efficiency converters. It is available in the TO-220FP package and is part of the FDmesh™ family, which combines low on-resistance with fast switching capabilities and an intrinsic fast-recovery body diode.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C11A
Continuous Drain Current (ID) at TC = 100°C7A
Pulsed Drain Current (IDM)44A
Total Dissipation at TC = 25°C160W
On-Resistance (RDS(on))0.45 ΩΩ
Thermal Resistance Junction-Case (Rthj-case)0.78°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
PackageTO-220FP

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High dv/dt and avalanche capabilities
  • Intrinsic fast-recovery body diode, making it suitable for bridge topologies and ZVS phase-shift converters
  • Tight process control and high manufacturing yields
  • ECOPACK® packages for environmental compliance

Applications

  • Switching applications, particularly in high-efficiency converters
  • Bridge topologies, especially in Zero Voltage Switching (ZVS) phase-shift converters

Q & A

  1. What is the maximum drain-source voltage of the STP11NM60FDFP?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STP11NM60FDFP?
    The typical on-resistance is 0.45 Ω.
  3. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 11 A.
  4. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case is 0.78 °C/W.
  5. What are the key features of the FDmesh™ technology used in this MOSFET?
    The FDmesh™ technology features low on-resistance, high dv/dt and avalanche capabilities, low input capacitance and gate charge, and an intrinsic fast-recovery body diode.
  6. In which package is the STP11NM60FDFP available?
    The STP11NM60FDFP is available in the TO-220FP package.
  7. What are the typical applications of the STP11NM60FDFP?
    The typical applications include switching applications, particularly in high-efficiency converters and bridge topologies like ZVS phase-shift converters.
  8. Is the STP11NM60FDFP environmentally compliant?
    Yes, it is available in ECOPACK® packages which meet environmental requirements.
  9. What is the maximum pulsed drain current for the STP11NM60FDFP?
    The maximum pulsed drain current is 44 A.
  10. What is the storage temperature range for the STP11NM60FDFP?
    The storage temperature range is -65 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$5.84
15

Please send RFQ , we will respond immediately.

Same Series
STP11NM60FDFP
STP11NM60FDFP
MOSFET N-CH 600V 11A TO220FP
STB11NM60FDT4
STB11NM60FDT4
MOSFET N-CH 600V 11A D2PAK

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
M74HC174RM13TR
M74HC174RM13TR
STMicroelectronics
IC FF D-TYPE SNGL 6BIT 16SOP
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP