STP11NM60FDFP
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STMicroelectronics STP11NM60FDFP

Manufacturer No:
STP11NM60FDFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 11A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP11NM60FDFP is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is known for its high efficiency and is suitable for demanding high-efficiency converters. It is available in the TO-220FP package and is part of the FDmesh™ family, which combines low on-resistance with fast switching capabilities and an intrinsic fast-recovery body diode.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C11A
Continuous Drain Current (ID) at TC = 100°C7A
Pulsed Drain Current (IDM)44A
Total Dissipation at TC = 25°C160W
On-Resistance (RDS(on))0.45 ΩΩ
Thermal Resistance Junction-Case (Rthj-case)0.78°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
PackageTO-220FP

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High dv/dt and avalanche capabilities
  • Intrinsic fast-recovery body diode, making it suitable for bridge topologies and ZVS phase-shift converters
  • Tight process control and high manufacturing yields
  • ECOPACK® packages for environmental compliance

Applications

  • Switching applications, particularly in high-efficiency converters
  • Bridge topologies, especially in Zero Voltage Switching (ZVS) phase-shift converters

Q & A

  1. What is the maximum drain-source voltage of the STP11NM60FDFP?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STP11NM60FDFP?
    The typical on-resistance is 0.45 Ω.
  3. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 11 A.
  4. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case is 0.78 °C/W.
  5. What are the key features of the FDmesh™ technology used in this MOSFET?
    The FDmesh™ technology features low on-resistance, high dv/dt and avalanche capabilities, low input capacitance and gate charge, and an intrinsic fast-recovery body diode.
  6. In which package is the STP11NM60FDFP available?
    The STP11NM60FDFP is available in the TO-220FP package.
  7. What are the typical applications of the STP11NM60FDFP?
    The typical applications include switching applications, particularly in high-efficiency converters and bridge topologies like ZVS phase-shift converters.
  8. Is the STP11NM60FDFP environmentally compliant?
    Yes, it is available in ECOPACK® packages which meet environmental requirements.
  9. What is the maximum pulsed drain current for the STP11NM60FDFP?
    The maximum pulsed drain current is 44 A.
  10. What is the storage temperature range for the STP11NM60FDFP?
    The storage temperature range is -65 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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