STP11NM60FDFP
  • Share:

STMicroelectronics STP11NM60FDFP

Manufacturer No:
STP11NM60FDFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 11A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP11NM60FDFP is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is known for its high efficiency and is suitable for demanding high-efficiency converters. It is available in the TO-220FP package and is part of the FDmesh™ family, which combines low on-resistance with fast switching capabilities and an intrinsic fast-recovery body diode.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C11A
Continuous Drain Current (ID) at TC = 100°C7A
Pulsed Drain Current (IDM)44A
Total Dissipation at TC = 25°C160W
On-Resistance (RDS(on))0.45 ΩΩ
Thermal Resistance Junction-Case (Rthj-case)0.78°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
PackageTO-220FP

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High dv/dt and avalanche capabilities
  • Intrinsic fast-recovery body diode, making it suitable for bridge topologies and ZVS phase-shift converters
  • Tight process control and high manufacturing yields
  • ECOPACK® packages for environmental compliance

Applications

  • Switching applications, particularly in high-efficiency converters
  • Bridge topologies, especially in Zero Voltage Switching (ZVS) phase-shift converters

Q & A

  1. What is the maximum drain-source voltage of the STP11NM60FDFP?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STP11NM60FDFP?
    The typical on-resistance is 0.45 Ω.
  3. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 11 A.
  4. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case is 0.78 °C/W.
  5. What are the key features of the FDmesh™ technology used in this MOSFET?
    The FDmesh™ technology features low on-resistance, high dv/dt and avalanche capabilities, low input capacitance and gate charge, and an intrinsic fast-recovery body diode.
  6. In which package is the STP11NM60FDFP available?
    The STP11NM60FDFP is available in the TO-220FP package.
  7. What are the typical applications of the STP11NM60FDFP?
    The typical applications include switching applications, particularly in high-efficiency converters and bridge topologies like ZVS phase-shift converters.
  8. Is the STP11NM60FDFP environmentally compliant?
    Yes, it is available in ECOPACK® packages which meet environmental requirements.
  9. What is the maximum pulsed drain current for the STP11NM60FDFP?
    The maximum pulsed drain current is 44 A.
  10. What is the storage temperature range for the STP11NM60FDFP?
    The storage temperature range is -65 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$5.84
15

Please send RFQ , we will respond immediately.

Same Series
STP11NM60FDFP
STP11NM60FDFP
MOSFET N-CH 600V 11A TO220FP
STB11NM60FDT4
STB11NM60FDT4
MOSFET N-CH 600V 11A D2PAK

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
TDA7564B
TDA7564B
STMicroelectronics
IC AMP AB QUAD 75W 25FLEXIWATT
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
TSV6290AICT
TSV6290AICT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT SC70-6
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO