Overview
The STI13NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device is part of a family of revolutionary Power MOSFETs that combine a vertical structure with a strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes the STI13NM60N highly suitable for high-efficiency converters and demanding switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 11 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 6.9 | A |
| Pulsed Drain Current (IDM) | 44 | A |
| Total Power Dissipation at TC = 25 °C | 25 | W |
| On-Resistance (RDS(on)) max. | 360 mΩ | mΩ |
| Thermal Resistance Junction-Case (Rthj-case) | 1.39 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-a) | 100 | °C/W |
| Avalanche Current (IAS) | 3.5 | A |
| Single-Pulse Avalanche Energy (EAS) | 200 mJ | mJ |
| Total Gate Charge (Qg) | 27 nC | nC |
| Gate Input Resistance (Rg) | 4.7 Ω | Ω |
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- 100% avalanche tested
- High efficiency due to low on-resistance and gate charge
- Available in TO-220FP, I²PAK, TO-220, and IPAK packages
- ECOPACK compliant for environmental sustainability
Applications
The STI13NM60N is designed for high-efficiency switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- Industrial automation
- Renewable energy systems
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STI13NM60N?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 11 A.
- What is the typical on-resistance (RDS(on)) of the STI13NM60N?
The typical on-resistance (RDS(on)) is 280 mΩ.
- What are the available package types for the STI13NM60N?
The STI13NM60N is available in TO-220FP, I²PAK, TO-220, and IPAK packages.
- Is the STI13NM60N environmentally compliant?
- What is the thermal resistance junction-case (Rthj-case) for the I²PAK package?
The thermal resistance junction-case (Rthj-case) for the I²PAK package is 1.39 °C/W.
- What is the single-pulse avalanche energy (EAS) of the STI13NM60N?
The single-pulse avalanche energy (EAS) is 200 mJ.
- What is the gate input resistance (Rg) of the STI13NM60N?
The gate input resistance (Rg) is 4.7 Ω.
- What are the typical switching times for the STI13NM60N?
The turn-on delay time (td(on)) is 3 ns, the rise time (tr) is 8 ns, the turn-off delay time (td(off)) is 30 ns, and the fall time (tf) is 10 ns.
- What is the operating junction temperature range of the STI13NM60N?
The operating junction temperature range is -55 to 150 °C.
