Overview
The STF10NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device is renowned for its high efficiency and low on-resistance, making it suitable for the most demanding applications. The STF10NM60N features a vertical structure combined with STMicroelectronics' strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it an ideal choice for high-efficiency converters and various switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Drain Current (ID) | 10 | A |
| Pulsed Drain Current (IDM) | 32 | A |
| Total Power Dissipation (PTOT) | 25 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 530 mΩ (typ.), 550 mΩ (max.) | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Package | TO-220FP |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Fast switching speed
- Enhancement mode operation
- Minimum lot-to-lot variations for robust device performance and reliable operation
Applications
The STF10NM60N is primarily used in switching applications and high-efficiency converters. It is suitable for load switching and power management due to its low on-resistance and fast switching capabilities.
Q & A
- What is the maximum drain-source voltage of the STF10NM60N?
The maximum drain-source voltage (VDS) is 600 V. - What is the typical on-resistance of the STF10NM60N?
The typical on-resistance (RDS(on)) is 530 mΩ. - What is the maximum continuous drain current of the STF10NM60N at 25°C?
The maximum continuous drain current (ID) at 25°C is 10 A. - What is the maximum junction temperature for the STF10NM60N?
The maximum junction temperature (Tj) is 150°C. - What package type is the STF10NM60N available in?
The STF10NM60N is available in the TO-220FP package. - What are the key benefits of using MDmesh II technology in the STF10NM60N?
The MDmesh II technology provides low on-resistance, low gate charge, and fast switching speed, making it suitable for high-efficiency converters. - Is the STF10NM60N 100% avalanche tested?
Yes, the STF10NM60N is 100% avalanche tested. - What are some common applications for the STF10NM60N?
Common applications include switching applications, load switching, and power management. - What is the maximum gate-source voltage for the STF10NM60N?
The maximum gate-source voltage (VGS) is ±25 V. - What is the typical gate threshold voltage of the STF10NM60N?
The typical gate threshold voltage (VGS(th)) is between 2-4 V.
