Overview
The FDN337N is a 30 V, 65 mΩ N-Channel logic level enhancement mode power field effect transistor produced by onsemi. This device is fabricated using high cell density DMOS technology, which is specifically designed to minimize on-state resistance. The FDN337N is particularly suited for low voltage applications where fast switching and low in-line power loss are critical.
Key Specifications
| FET Type | N-Channel |
|---|---|
| Drain-to-Source Voltage (Vdss) | 30 V |
| Drain-Source On Resistance-Max (RDS(ON)) | 0.065 Ω @ VGS = 4.5 V, 0.082 Ω @ VGS = 2.5 V |
| Rated Power Dissipation | 0.5 W |
| Continuous Drain Current (ID) | 2.2 A |
| Package Style | SSOT-3 (SuperSOT-3) |
| Mounting Method | Surface Mount |
| Gate to Source Voltage (VGS) | ±8 V |
| Operating Junction Temperature Range | -55°C to 150°C |
Key Features
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Industry standard outline SOT-23 surface mount package
- Low on-state resistance of 65 mΩ at VGS = 4.5 V
- Continuous drain current of 2.2 A
- Maximum power dissipation of 500 mW
Applications
- Load switch
- Battery protection
- Power management
- Notebook computers
- Portable phones
- PCMCIA cards and other battery-powered circuits
Q & A
- What is the drain-to-source voltage (Vdss) of the FDN337N?
The drain-to-source voltage (Vdss) of the FDN337N is 30 V.
- What is the maximum drain-source on resistance (RDS(ON)) of the FDN337N?
The maximum drain-source on resistance (RDS(ON)) is 0.065 Ω at VGS = 4.5 V and 0.082 Ω at VGS = 2.5 V.
- What is the continuous drain current (ID) of the FDN337N?
The continuous drain current (ID) of the FDN337N is 2.2 A.
- What is the package style of the FDN337N?
The package style of the FDN337N is SSOT-3 (SuperSOT-3).
- What is the mounting method of the FDN337N?
The mounting method of the FDN337N is surface mount.
- What are the typical applications of the FDN337N?
The FDN337N is typically used in load switch, battery protection, power management, notebook computers, portable phones, and PCMCIA cards.
- What is the operating junction temperature range of the FDN337N?
The operating junction temperature range of the FDN337N is -55°C to 150°C.
- What is the maximum power dissipation of the FDN337N?
The maximum power dissipation of the FDN337N is 500 mW.
- What is the gate to source voltage (VGS) range of the FDN337N?
The gate to source voltage (VGS) range of the FDN337N is ±8 V.
- Why is the FDN337N suitable for low voltage applications?
The FDN337N is suitable for low voltage applications due to its high density cell design, which minimizes on-state resistance and provides fast switching and low in-line power loss.
