FDN537N
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onsemi FDN537N

Manufacturer No:
FDN537N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 6.5A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDN537N is a single N-Channel MOSFET produced by onsemi, utilizing the advanced Power Trench® process. This technology has been optimized for low on-resistance (rDS(on)), enhanced switching performance, and increased ruggedness. The device is packaged in a SOT-23-3 surface mount configuration, making it suitable for a variety of applications where space is limited and high performance is required.

Key Specifications

ParameterValue
Channel ModeN-Channel
Drain-Source Voltage (Vds)30 V
Continuous Drain Current (Id)6.5 A (Ta), 6.5 A (Tc)
Power Dissipation (Pd)1.5 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Package TypeSOT-23-3

Key Features

  • Low on-resistance (rDS(on)) for efficient power handling
  • Enhanced switching performance for high-frequency applications
  • High ruggedness and reliability
  • Compact SOT-23-3 surface mount package for space-saving designs
  • Wide operating temperature range from -55°C to +150°C

Applications

The FDN537N MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management and switching circuits
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive and industrial control systems
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage of the FDN537N MOSFET?
    The maximum drain-source voltage (Vds) is 30 V.
  2. What is the continuous drain current rating of the FDN537N?
    The continuous drain current (Id) is 6.5 A at both ambient temperature (Ta) and case temperature (Tc).
  3. What is the power dissipation rating of the FDN537N?
    The power dissipation (Pd) is 1.5 W.
  4. What is the operating temperature range of the FDN537N?
    The operating temperature range is from -55°C to +150°C.
  5. What package type is the FDN537N available in?
    The FDN537N is available in a SOT-23-3 surface mount package.
  6. What process technology is used in the FDN537N?
    The FDN537N is produced using onsemi's advanced Power Trench® process.
  7. Is the FDN537N still in production?
    No, the FDN537N is discontinued and not in production.
  8. Where can I find detailed specifications for the FDN537N?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and Digi-Key.
  9. What are some typical applications for the FDN537N MOSFET?
    Typical applications include power management, DC-DC converters, motor control, automotive systems, and high-frequency switching applications.
  10. How does the Power Trench® process benefit the FDN537N?
    The Power Trench® process optimizes the FDN537N for low on-resistance, enhanced switching performance, and increased ruggedness.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Ta), 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number FDN537N FDN337N
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 6.5A (Tc) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 6.5A, 10V 65mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 10 V 9 nC @ 4.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 465 pF @ 15 V 300 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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