FDN335N
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onsemi FDN335N

Manufacturer No:
FDN335N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 1.7A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDN335N is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process. This technology is designed to minimize on-state resistance, making the MOSFET highly efficient for various applications. The FDN335N is specified for a low threshold voltage of 2.5V, which is beneficial for low-voltage circuits and systems. It is packaged in a SOT-23-3 package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
Voltage Rating (Vds)20V
Current Rating (Id)1.7A
Power Dissipation (Pd)500mW
On-State Resistance (Rds(on))0.07Ω @ 4.5V, 1.7A
Threshold Voltage (Vth)1.5V @ 250μA
Package TypeSOT-23-3

Key Features

  • Low on-state resistance (Rds(on)) of 0.07Ω @ 4.5V, 1.7A, enhancing efficiency in power applications.
  • Low threshold voltage of 2.5V, suitable for low-voltage circuits.
  • Compact SOT-23-3 package, ideal for space-constrained designs.
  • High current rating of 1.7A, making it suitable for a variety of power management tasks.
  • Advanced PowerTrench process for improved performance and reliability.

Applications

  • Motor driver applications: The FDN335N's low on-resistance and high current rating make it a good choice for motor control circuits.
  • Power management: Suitable for DC-DC converters, voltage regulators, and other power management circuits.
  • Low-voltage systems: Ideal for use in systems where low threshold voltage is required.
  • Automotive and industrial control systems: Can be used in various control and switching applications in these sectors.

Q & A

  1. What is the voltage rating of the FDN335N MOSFET?
    The voltage rating (Vds) of the FDN335N is 20V.
  2. What is the current rating of the FDN335N?
    The current rating (Id) of the FDN335N is 1.7A.
  3. What is the on-state resistance of the FDN335N?
    The on-state resistance (Rds(on)) of the FDN335N is 0.07Ω @ 4.5V, 1.7A.
  4. What is the threshold voltage of the FDN335N?
    The threshold voltage (Vth) of the FDN335N is 1.5V @ 250μA.
  5. What package type is the FDN335N available in?
    The FDN335N is available in a SOT-23-3 package.
  6. What is the PowerTrench process used in the FDN335N?
    The PowerTrench process is an advanced technology used to minimize on-state resistance and enhance the MOSFET's performance.
  7. What are some common applications of the FDN335N?
    The FDN335N is commonly used in motor driver applications, power management circuits, low-voltage systems, and automotive and industrial control systems.
  8. Is the FDN335N RoHS compliant?
    Yes, the FDN335N is RoHS compliant.
  9. What is the power dissipation rating of the FDN335N?
    The power dissipation rating (Pd) of the FDN335N is 500mW.
  10. Where can I find detailed specifications for the FDN335N?
    Detailed specifications for the FDN335N can be found in the datasheet available on onsemi's official website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number FDN335N FDN337N
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 70mOhm @ 1.7A, 4.5V 65mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V 9 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 10 V 300 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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