Overview
The FDBL86363-F085 is a high-performance N-Channel MOSFET from onsemi, designed for demanding applications in the automotive and industrial sectors. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power density and efficiency. With a drain-to-source voltage (VDSS) of 80 V and a maximum drain current (ID) of 240 A, this MOSFET is well-suited for high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 80 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Maximum Drain Current (ID) | 240 | A |
| Typical RDS(on) at VGS = 10 V, ID = 80 A | 1.5 mΩ | mΩ |
| Gate to Source Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V |
| Total Gate Charge (Qg(tot)) at VGS = 10 V, ID = 80 A | 130 nC | nC |
| Input Capacitance (Ciss) at VDS = 25 V, VGS = 0 V, f = 1 MHz | 10000 pF | pF |
| Output Capacitance (Coss) | 1540 pF | pF |
| Reverse Transfer Capacitance (Crss) | 70 pF | pF |
Key Features
- Typical RDS(on) of 1.5 mΩ at VGS = 10 V, ID = 80 A, ensuring low on-state resistance.
- UIS (Unclamped Inductive Switching) capability for robust performance in inductive switching applications.
- AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive applications.
- Pb-free, halogen-free, and RoHS compliant, meeting environmental standards.
- Advanced POWERTRENCH technology for enhanced power density and efficiency.
Applications
- Automotive Engine Control: Suitable for engine management systems and fuel injection control.
- PowerTrain Management: Used in transmission control and other powertrain components.
- Solenoid and Motor Drivers: Ideal for driving solenoids and motors in various automotive systems.
- Integrated Starter/Alternator: Can be used in integrated starter/alternator systems for improved efficiency.
- Primary Switch for 12 V Systems: Suitable as a primary switch in 12 V automotive electrical systems.
- Distributed Power Architectures and VRM: Can be used in distributed power architectures and voltage regulator modules.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the FDBL86363-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 80 V. - What is the typical on-state resistance (RDS(on)) of the FDBL86363-F085?
The typical RDS(on) is 1.5 mΩ at VGS = 10 V, ID = 80 A. - Is the FDBL86363-F085 AEC-Q101 qualified?
Yes, the FDBL86363-F085 is AEC-Q101 qualified and PPAP capable. - What are the environmental compliance standards for the FDBL86363-F085?
The device is Pb-free, halogen-free, and RoHS compliant. - What is the maximum drain current (ID) of the FDBL86363-F085?
The maximum drain current (ID) is 240 A. - What is the gate-to-source threshold voltage (VGS(th)) range of the FDBL86363-F085?
The gate-to-source threshold voltage (VGS(th)) range is 2.0 to 4.0 V. - What are some typical applications of the FDBL86363-F085 MOSFET?
Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12 V systems. - What is the total gate charge (Qg(tot)) of the FDBL86363-F085 at VGS = 10 V, ID = 80 A?
The total gate charge (Qg(tot)) is 130 nC at VGS = 10 V, ID = 80 A. - Does the FDBL86363-F085 have UIS capability?
Yes, the FDBL86363-F085 has UIS (Unclamped Inductive Switching) capability. - What is the input capacitance (Ciss) of the FDBL86363-F085 at VDS = 25 V, VGS = 0 V, f = 1 MHz?
The input capacitance (Ciss) is 10000 pF at VDS = 25 V, VGS = 0 V, f = 1 MHz.
