Overview
The FDB86363-F085 is a high-performance N-Channel MOSFET produced by onsemi, designed for demanding applications requiring high current handling and low on-resistance. This device is part of the POWERTRENCH® family, known for its advanced trench technology that enhances power density and efficiency. The FDB86363-F085 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VDSS (Drain-to-Source Voltage) | - | - | - | 80 | V |
| VGS (Gate-to-Source Voltage) | - | - | - | ±20 | V |
| ID (Drain Current) - Continuous | VGS = 10 V, TC = 25°C | - | - | 110 | A |
| ID (Drain Current) - Pulsed | TC = 25°C | - | - | See Figure 4 | A |
| EAS (Single Pulse Avalanche Energy) | Starting TJ = 25°C, L = 0.25 mH, IAS = 64 A, VDD = 80 V | - | - | 512 | mJ |
| PD (Power Dissipation) | - | - | - | 300 | W |
| TJ, TSTG (Operating and Storage Temperature) | - | -55 | - | 175 | °C |
| RθJC (Thermal Resistance, Junction to Case) | - | - | - | 0.5 | °C/W |
| RθJA (Maximum Thermal Resistance, Junction to Ambient) | - | - | - | 43 | °C/W |
| RDS(on) (Drain-to-Source On-Resistance) | ID = 80 A, VGS = 10 V, TJ = 25°C | 2.0 | 2.4 | 3.8 | mΩ |
| Qg(TOT) (Total Gate Charge) | VGS = 0 V to 10 V, VDD = 64 V, ID = 80 A | 131 | - | 150 | nC |
Key Features
- Typical RDS(on) = 2.0 mΩ at VGS = 10 V, ID = 80 A
- Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A
- UIS Capability
- AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halide Free, and RoHS Compliant
Applications
- Automotive Engine Control
- Power Train Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12 V Systems
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the FDB86363-F085?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the typical on-resistance (RDS(on)) of the FDB86363-F085?
The typical on-resistance (RDS(on)) is 2.0 mΩ at VGS = 10 V, ID = 80 A.
- What is the maximum continuous drain current (ID) of the FDB86363-F085?
The maximum continuous drain current (ID) is 110 A at VGS = 10 V, TC = 25°C.
- Is the FDB86363-F085 AEC-Q101 qualified?
- What are the typical gate charge characteristics of the FDB86363-F085?
The typical total gate charge (Qg(TOT)) is 131 nC at VGS = 0 V to 10 V, VDD = 64 V, ID = 80 A.
- What are the thermal resistance characteristics of the FDB86363-F085?
The thermal resistance from junction to case (RθJC) is 0.5 °C/W, and the maximum thermal resistance from junction to ambient (RθJA) is 43 °C/W.
- What are the common applications of the FDB86363-F085?
- Is the FDB86363-F085 Pb-Free and RoHS compliant?
- What is the package type of the FDB86363-F085?
The package type is D2PAK-3 (TO-263, 3-lead).
- What are the switching characteristics of the FDB86363-F085?
The device has specified turn-on and turn-off times, delays, and rise and fall times, such as ton = 231 ns, td(on) = 38 ns, tr = 129 ns, td(off) = 64 ns, tf = 40 ns, and toff = 135 ns.
