Overview
The STF12NM50ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the STB12NM50ND, STD12NM50ND, and STF12NM50ND series, which utilize FDmesh™ II technology. This technology combines the benefits of MDmesh™ features with an intrinsic fast-recovery body diode, resulting in reduced on-resistance and fast switching commutations. The STF12NM50ND is particularly suited for applications requiring low trr (reverse recovery time), such as bridge topologies.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 11 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 6.9 | A |
| Pulsed Drain Current (IDM) | 44 | A |
| Total Dissipation at TC = 25 °C | 100 | W |
| On-Resistance (RDS(on)) | 0.38 Ω | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Turn-On Delay Time (td(on)) | 12 ns | ns |
| Rise Time (tr) | 15 ns | ns |
| Turn-Off Delay Time (td(off)) | 40 ns | ns |
| Fall Time (tf) | 17 ns | ns |
| Reverse Recovery Time (trr) | 122 ns | ns |
| Reverse Recovery Charge (Qrr) | 650 nC | nC |
Key Features
- FDmesh™ II technology combining MDmesh™ features with an intrinsic fast-recovery body diode.
- Low on-resistance (RDS(on)) of 0.38 Ω.
- Low input capacitance and gate charge.
- Low gate input resistance.
- 100% avalanche tested.
- Fast switching commutations and low trr, making it suitable for bridge topologies.
Applications
- Switching applications.
- Bridge topologies where low trr is required.
- High-power electronic systems requiring efficient and fast switching.
- Power supplies and DC-DC converters.
- Motor control and drive systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF12NM50ND?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 11 A.
- What is the on-resistance (RDS(on)) of the STF12NM50ND?
The on-resistance (RDS(on)) is 0.38 Ω.
- What technology does the STF12NM50ND use?
The STF12NM50ND uses FDmesh™ II technology, which combines MDmesh™ features with an intrinsic fast-recovery body diode.
- What are the typical applications of the STF12NM50ND?
The STF12NM50ND is typically used in switching applications, bridge topologies, and high-power electronic systems.
- What is the gate threshold voltage (VGS(th)) range of the STF12NM50ND?
The gate threshold voltage (VGS(th)) range is 3 to 5 V.
- What is the reverse recovery time (trr) of the STF12NM50ND?
The reverse recovery time (trr) is 122 ns.
- What is the total dissipation at TC = 25 °C for the STF12NM50ND?
The total dissipation at TC = 25 °C is 100 W.
- What are the package options available for the STF12NM50ND?
The STF12NM50ND is available in TO-220FP, D2PAK, and DPAK packages.
- Is the STF12NM50ND 100% avalanche tested?
Yes, the STF12NM50ND is 100% avalanche tested.
