STP6N62K3
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STMicroelectronics STP6N62K3

Manufacturer No:
STP6N62K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 620V 5.5A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP6N62K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the MDmesh K3 series, which combines advanced MDmesh technology with an optimized vertical structure. This enhancement results in improved electrical characteristics, making it suitable for a wide range of high-power applications.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)620 V
Drain Current (Id)5.5 A (typical), 3 A (continuous)
On-Resistance (Rds(on))0.95 Ω (typical) at Vgs = 10 V, Id = 2.8 A
Power Dissipation (Pd)30 W
Threshold Voltage (Vth)4.5 V at Id = 50 μA
PackagingTO-220

Key Features

  • High drain-source voltage (Vds) of 620 V, making it suitable for high-voltage applications.
  • Low on-resistance (Rds(on)) of 0.95 Ω, which minimizes power losses.
  • High continuous drain current (Id) of 3 A and a peak current of 5.5 A.
  • Improved thermal performance due to the optimized vertical structure of the MDmesh K3 technology.
  • Compliant with RoHS standards, ensuring environmental sustainability.

Applications

The STP6N62K3 is designed for use in various high-power applications, including:

  • Switch-mode power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage industrial and medical equipment.
  • Aerospace and defense systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STP6N62K3?
    The maximum drain-source voltage (Vds) is 620 V.
  2. What is the typical on-resistance of the STP6N62K3?
    The typical on-resistance (Rds(on)) is 0.95 Ω at Vgs = 10 V, Id = 2.8 A.
  3. What is the continuous drain current rating of the STP6N62K3?
    The continuous drain current (Id) is 3 A.
  4. What is the power dissipation capability of the STP6N62K3?
    The power dissipation (Pd) is 30 W.
  5. What packaging is the STP6N62K3 available in?
    The STP6N62K3 is available in the TO-220 package.
  6. Is the STP6N62K3 RoHS compliant?
    Yes, the STP6N62K3 is RoHS compliant.
  7. What technology is used in the STP6N62K3?
    The STP6N62K3 uses STMicroelectronics' MDmesh K3 technology.
  8. What are some typical applications for the STP6N62K3?
    Typical applications include switch-mode power supplies, motor control systems, high-voltage industrial and medical equipment, and aerospace and defense systems.
  9. What is the threshold voltage of the STP6N62K3?
    The threshold voltage (Vth) is 4.5 V at Id = 50 μA.
  10. Where can I find detailed specifications for the STP6N62K3?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:875 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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STP6N62K3
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STU6N62K3
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Similar Products

Part Number STP6N62K3 STP4N62K3 STP5N62K3 STP6N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 620 V 525 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 3.8A (Tc) 4.2A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V 1.95Ohm @ 1.9A, 10V 1.6Ohm @ 2.1A, 10V 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 14 nC @ 10 V 26 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 875 pF @ 50 V 450 pF @ 50 V 680 pF @ 50 V 670 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 90W (Tc) 70W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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